Nippon Hoso' Kyokai

Hitachi, Ltd.

Shimadzu Corporation

Shirou Suzuki

Kenkichi Tanioka

Tadaaki Hirai

Keiichi Shidara

Masanao Yamamoto

Junichi Yamazaki

Shiro Oikawa

Kenji Sameshima

Takayuki Takemoto

Takaaki Unnai

Eikiyu Hiruma

Tutomu Katou

Kazutaka Tsuji

Yukio Takasaki

Hiromichi Tonami

Tatsuo Makishima

Takashi Yamashita

Yasuhiko Nonaka

Naohiro Goto

Eisuke Inoue

Tatsuro Kawamura

Hirofumi Ogawa

Masaaki Aiba

Eikyuu Hiruma

Shigeru Ehata

Yutaro Kimura

Hidetoshi Kishimoto

Toshio Yamagishi

Takahisa Nishikawa

Keiichi Hiragaki

Tatsuya Shimizu

An X-ray image pickup tube converts a transmitted X-ray image into electric signals. The pickup tube includes a target structure having a fluorescent element, and a translucent conductive film for receiving a high voltage, with a photoconductive film laminated thereupon. The fluorescent element receives transmitted X rays in a two-dimensional distribution, and converts them into visible rays in a two-dimensional distribution. The translucnet conductive film is optically coupled to a surface of the fluorescent element opposite from an X-ray incident surface thereof. The photoconductive film includes an amorphors semiconductor layer which converts the visible rays transmitted in a two-dimensional distribution through the translucent conductive film, into electric charges in a two-dimensional distribution, and which multiplies the electric charges in the two-dimensional distribution based on electric fields formed by the high voltage applied to the translucent conductive film. The pickup tube also has a signal reading device in the form of an electron gun or switching elements for scanning a surface of the photoconductive film, as electric signals, a two-dimensional electric potential distribution occurring on the photoconductive film.

X-ray image pickup tube

A two-dimensional radiation detector for obtaining a radiographic image as converted into electric signals. The detector has a multi-layer structure including a scintilator, a translucent electrode film, a photoconductive film and a scan switch layer. The scan switch layer includes conductors arranged in matrix form and in contact with the photoconductive film, a plurality of FETs corresponding to the conductors arranged in matrix form, and a uniformly planar conductor for successively applying a bias voltage through the FETs to the matrix conductors row by row. Each FET has a drain electrode connected to one of the matrix conductors, a source electrode connected to the uniformly planar conductor, and a gate electrode connected to the drive circuit. The translucent electrode film includes column conductors corresponding to columns of the matrix conductors, each of the column conductors being connected to a signal reading line.

Two-dimensional radiation detector

An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.

Method of fabricating an image pick-up tube and target section used

A method of making an image pickup tube target (FIG. 1A), etc., using an amorphous photoconductive layer. When an electrode, an amorphous semiconductor layer, etc., are provided on a substrate, the steps of ion etching away a surface of the substrate and forming the electrode are performed so that a target (FIG. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.

Method of making a photosensor

A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

Target of image pickup tube

Growing community of inventors

Yokosuka, Japan

Shirou Suzuki