Fujitsu Corporation

Fujitsu Microelectronics Limited

Shirou Ozaki

Naoya Okamoto

Kozo Makiyama

Yoshihiro Nakata

Toshihiro Ohki

Yuichi Minoura

Masayuki Takeda

Yasushi Kobayashi

Toyoo Miyajima

Ei Yano

Norikazu Nakamura

Keiji Watanabe

Tadahiro Imada

Toshihide Kikkawa

Kenji Imanishi

Junji Kotani

Masahito Kanamura

Youichi Kamada

Kouta Yoshikawa

Yusuke Kumazaki

Atsushi Yamada

Junichi Kon

Hirofumi Watatani

Tamotsu Owada

Shun-ichi Fukuyama

Naoki Hara

Lei Zhu

Junya Yaita

A compound semiconductor device includes a carrier supply layer, a channel layer disposed over the carrier supply layer and configured to include InGaAs, and an etching stopper layer disposed over the channel layer, and configured to include a first layer disposed over the channel layer and configured to include InGaP, and a second layer disposed over the first layer and configured to include InGaP, wherein x1 is greater than 0 and less than or equal to 1, x2 is greater than or equal to 0 and less than 1, and x1 is greater than x2.

Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device

A high-frequency circuit board includes: a first insulating layer having a first dielectric constant; a first metal layer provided to stack over the first insulating layer; a second insulating layer provided to stack over the first metal layer, and having a second dielectric constant lower than the first dielectric constant; a second metal layer provided to stack over the second insulating layer, on which a compound semiconductor device is mounted; and first vias penetrating the second insulating layer and connecting the first metal layer with the second metal layer.

High-frequency circuit board and antenna module

A semiconductor device includes a source electrode and a drain electrode located over a surface of a semiconductor layer including an electron transit layer and an electron supply layer. A gate electrode is located between the source electrode and the drain electrode. A first diamond layer is located between the source electrode and the drain electrode over the surface with an insulating film therebetween. A second diamond layer is located directly on the surface between the gate electrode and the drain electrode. Of heat generated by the semiconductor layer of the semiconductor device in operation, heat on the side of the electrode on which a relatively strong electric field is applied is efficiently transferred to the second diamond layer. The semiconductor device achieves an excellent heat dissipation property from the semiconductor layer and effectively suppresses overheating and a failure and degradation of the characteristics due to the overheating.

Semiconductor device, semiconductor device fabrication method, and electronic device

A disclosed semiconductor device includes an electron transit layer; an electron supply layer disposed above the electron transit layer; a source electrode, a drain electrode, and a gate electrode, the source electrode, the drain electrode, and the gate electrode being disposed on the electron supply layer; a first capping layer disposed on the electron supply layer between the gate electrode and the drain electrode; and a negative charge generation layer disposed on the first capping layer, the negative charge generation layer being configured to generate a negative charge.

Semiconductor device

A compound semiconductor device includes: a semiconductor laminate structure including an electron transit layer and an electron supply layer that are formed from a compound semiconductor; a gate electrode, a source electrode, and a drain electrode that are provided above the electron supply layer; and an insulating layer that is provided between the source electrode and the drain electrode, over the semiconductor laminate structure, and with a gate recess formed therein, wherein the gate electrode includes: a first portion in the gate recess; and a second portion that is coupled to the first portion and is provided over the insulating layer at a position further on the drain electrode side than the gate recess, wherein the insulating layer includes an aluminum oxide film in direct contact with the semiconductor laminate structure.

Compound semiconductor device, method for manufacturing the same and amplifier

A compound semiconductor device includes a compound semiconductor stack structure, a protective film provided on the compound semiconductor stack structure and containing titanium oxide, and a polycrystalline diamond film provided on the protective film.

Compound semiconductor device and fabrication method therefor, and amplifier

A compound semiconductor device includes a compound semiconductor laminate structure including an electron transit layer and an electron supply layer, a gate electrode, a source electrode, and a drain electrode that are formed over the electron supply layer, a first insulating layer of diamond formed between the gate electrode and the drain electrode over the compound semiconductor laminate structure, and a second insulating layer formed between the gate electrode and the source electrode over the compound semiconductor laminate structure, wherein a positive compressive stress is applied from the first insulating layer to the electron supply layer, and a compressive stress from the second insulating layer to the electron supply layer is smaller than the compressive stress from the first insulating layer to the electron supply layer.

Compound semiconductor device

A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOand InO. AlO/InOin the metal oxide film is greater than or equal to 3.

Method for manufacturing gate insulator for HEMT

A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which is formed on a surface of the first insulating film and contains a carbonyl group; and a second insulating film which covers a surface of the first adhering film and has a lower dielectric constant than the first insulating film.

Semiconductor device and manufacturing method thereof

An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Etching method for manufacturing semiconductor device

A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.

Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier

A semiconductor device includes a first semiconductor layer formed of a compound semiconductor, provided over a substrate; a second semiconductor layer formed of a compound semiconductor including In and Al, provided over the first semiconductor layer; source and drain electrodes provided on the second semiconductor layer; and a gate electrode provided between the source and drain electrodes, on the second semiconductor layer. The compound semiconductor in the second semiconductor layer has a first In composition ratio in a region on a side facing the substrate and a second In composition ratio in a region on an opposite side, the second In composition ratio being lower than the first In composition ratio, and the source and drain electrodes are provided in contact with the region having the first In composition ratio, and the gate electrode is provided on the region having the second In composition ratio.

Semiconductor device, manufacturing method of semiconductor device, power unit, and amplifier

[object Object]

A compound semiconductor device includes: a carrier transit layer; a carrier supply layer over the carrier transit layer; a source electrode and a drain electrode above the carrier supply layer; a gate electrode above the carrier supply layer between the source electrode and the drain electrode; and a first insulating film and a second insulating film above the carrier supply layer between the gate electrode and the drain electrode. The gate electrode includes a portion above the second insulating film, the second insulating film covers a side surface of the first insulating film from the drain electrode side, and a second concentration of electron traps in the second insulating film is higher than a first concentration of electron traps in the first insulating film.

Compound semiconductor device and method of manufacturing the same

A semiconductor device includes a compound semiconductor layer, a gate electrode, and first and second insulating layers. The first insulating layer covers the gate electrode on the compound semiconductor layer and has a cavity that surrounds the gate electrode. The second insulating layer is provided on the first insulating layer and has an opening at a position corresponding to the cavity. A part of the second insulating layer, which is provided on the first insulating layer that covers the gate electrode, corresponding to the cavity is removed via the opening, so that the generation of parasitic capacitance due to the second insulating layer is suppressed.

Growing community of inventors

Yamato, Japan

Shirou Ozaki