Sony Corporation

Sony Semiconductor Solutions Corporation

Suzhou Institute of Nano-tech and Nano-bionics

Sony Shiroishi Semiconductor Inc.

Shiro Uchida

Tsuyoshi Tojo

Masao Ikeda

Hideshi Abe

Osamu Goto

Tomomasa Watanabe

Takeharu Asano

Katsuyoshi Shibuya

Yasuhiko Suzuki

Takashi Mizuno

Motonobu Takeya

Keiji Mabuchi

Hideo Kanbe

Hiroshi Yoshida

Akiko Honjo

Takahiro Arakida

Hui Calvin Yang

Tomonori Hino

Osamu Maeda

Masaki Shiozaki

Satoru Kijima

Shinichi Ansai

Yoshifumi Yabuki

Masayuki Arimochi

Shulong Lu

Xinhe Zheng

Masayuki Tanaka

Masaru Kuramoto

Susumu Sato

Shoji Hirata

Koji Iwamoto

Takashi Tange

Hiroki Nagasaki

Hisayoshi Motobayashi

Shinichi Agatsuma

Tsuyoshi Tojyo

Ichiro Nomachi

Motonobu Taketani

A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.

Image capturing apparatus including a compound semiconductor layer

An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

Imaging device and method for manufacturing the same

An optical shaping apparatus includes: a light source unit that outputs collimated light; an optical function unit that is disposed on an optical path of the collimated light and modulates the optical path or a phase of the collimated light; and a control unit that controls operation of the optical function unit, to irradiate a target surface with modulated light produced in the optical function unit.

Optical shaping apparatus and method of manufacturing shaped object

A light receiving/emitting elementincludes: a light receiving/emitting layerin which a plurality of compound semiconductor layers are stacked; and an electrodehaving a first surfaceA and a second surfaceB and made of a transparent conductive material, in which the second surface faces the first surfaceA, and the electrode is in contact, at the first surfaceA, with the light receiving/emitting layer. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surfaceA of the electrodeis higher than concentration of the additive contained in the transparent conductive material near the second surfaceB of the electrode

Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element

An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a reg between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure

Method of manufacturing an imaging device

A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.

Semiconductor light-emitting device

The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.

Semiconductor light emitting device

A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Growing community of inventors

Tokyo, Japan

Shiro Uchida