Kabushiki Kaisha Toshiba

Shiro Takeno

Isao Suzuki

Hiroshi Tomita

Hideki Yoshida

Masaaki Yamamoto

Akira Okada

Iwao Higashikawa

Isao Sakai

Hiroshi Mitsuhashi

Takamichi Inaba

Tatsuoki Kono

Mitsuhiro Tomita

Yoshito Kawakyu

Hideki Matsunaga

Mitsuo Koike

Hideyuki Sasaki

Seizo Doi

Yuki Matsuura

Michihiro Oose

Shigeru Kanbayashi

The invention provides a method of determining a lattice constant of an arbitrary material such as a polycrystalline material speedily and easily, and a method of evaluating the stress and strain of the material speedily. According to the invention, the lattice constant of a standard sample is varied within a predetermined range and finds the HOLZ line pattern of the standard sample by calculation using an equation (y=f(x, a)=&#x3b1;(a)x+&#x3b2;(a)) and the data of the pattern is accumulated to form a data library. On the other hand, a test sample to be measured is irradiated and scanned with a convergent electron beam. Then, a developing HOLZ line pattern is compared with the HOLZ line pattern in the data library and the most similar HOLZ line pattern is selected. From the data of the lattice constant of the data library having the most similar HOLZ line pattern, the lattice constant of the test sample to be measured is determined. Moreover, the distribution state of the stress and strain of the test sample to be measured can be two-dimensionally mapped by the use of the lattice constant determined in this manner.

Method of determining lattice constant, method of evaluating material by using the same and electronic microscope suitable for using the same

Hydrogen-absorbing alloy, electrode and secondary battery

Disclosed are a method and an apparatus for detecting a defect in a dielectric film. The dielectric film is electrified in an electrolyte solution containing a metal in such a manner the dielectric film is charged negative, thereby the metal is deposited on the dielectric film at a position corresponding to the defect. The detecting method has a first deposition step for forming a first metal deposit on the dielectric film in an annular form surrounding the position corresponding to the defect; and a second deposition step for forming a second metal deposit located on the position corresponding to the defect, on the dielectric film. The detecting apparatus has a vessel for accommodating the electrolyte solution; a first electrode for electrifying the dielectric film and a second electrode; and an electric power source for controlably applying a voltage to electrifying between the first electrode and the second electrode in which a value and a direction of the applied voltage is variable.

Method for detecting defects in dielectric film

There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C. is used to suppress heat dissipation from the molten liquid of the semiconductor to the substrate so that time until the complete solidification can be prolonged. Furthermore, the beam is irradiated so as to form a standing wave at a predetermined position of the surface of the semiconductor film to generate the heat density distribution having the same cycle with the standing wave and to melt the semiconductor film with the result that a polycrystal semiconductor film comprising a uniform and a large crystal grains by controlling the distribution of the crystal nuclei at the interface between the base film and the substrate.

Method for manufacturing polycrystal semiconductor film

An electron-beam lithography system employing an 'electron holography' technique is disclosed. The system at least comprises: a shaping aperture for shaping an electron beam emitted from an electron-beam source so as to have a specific beam shape; at least two single crystal thin films for diffracting the electron beam passed through this shaping aperture; focusing means for respectively focusing the incident electron beam passed through these single crystal thin films and the diffracted electron beams diffracted by these single crystal thin films; and a select aperture for selecting only the desired diffracted electron beams. The transmitted incident electron beam interferes with the diffracted electron beams, whereby a stripe pattern having a desired nanometer-order pitch is formed on a resist surface coated onto a semiconductor substrate or a mask blank.

Electron-beam lithography system and method for drawing nanometer-order

Growing community of inventors

Kanagawa-ken, Japan

Shiro Takeno