Seoul Semiconductor Co., Ltd.

Seoul Opto Device Co., Ltd.

Other

Seoul Viosys Co., Ltd.

Nitride Semiconductors Co., Ltd.

The University of Tokushima

Sharp Kabushiki Kaisha Corporation

Shiro Sakai

Nitride Semiconductor Co., Ltd.

Yasuo Ono

Jin-Ping Ao

Kyoung Wan Kim

Hwa Mok Kim

Joon Hee Lee

Chang Youn Kim

Soo Young Moon

Yuji Mori

Yukichi Takamatsu

Yoshiyasu Ishihama

Yves Lacroix

Tao Wang

Hong Xing Wang

Yutaka Amijima

Yoshiki Naoi

Tomoya Sugahara

Hisao Sato

Dae Won Kim

Masaya Ishida

Hisao Tanaka

Kyung Wan Kim

Yoshihiko Muramoto

Shinji Kitazawa

Naoki Wada

Masahiro Kimura

Masashi Tsukihara

Hiroyuki Naoi

Makoto Sakai

Won Chul Seo

Etsuo Ebisawa

Jin-Ping The University Of Takushima Ao

Jin-Ping c/o The University Of Tokushima Ao

H c/o Nitride Semiconductors Co Ltd Sato

N c/o Nitride Semiconductors Co Ltd Wada

M c/o Nitride Semiconductors Co Ltd Kimura

A method of manufacturing a semiconductor substrate including forming a first layer on a substrate, patterning the first layer to form a plurality of patterns spaced apart from one another, forming a second layer on the patterns to cover each of the patterns, heat-treating the second layer to form cavities in the patterns between the second layer and the substrate, and growing the second layer covering the cavities.

Semiconductor substrate, semiconductor device, and manufacturing methods thereof

A light-emitting device operating on a high drive voltage and a small drive current. LEDs () are two-dimensionally formed on an insulating substrate () of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes () in inverse parallel. Air-bridge wiring () is formed between the LEDs () and between the LEDs () and electrodes (). The LED arrays are arranged zigzag to form a plurality of LEDs () to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Light-emitting device having light-emitting elements and electrode spaced apart from the light emitting element

A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution, forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer, and forming a cavity entirely through a portion of the first semiconductor layer located under where the metallic material layer was removed.

A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution, forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer, and forming a cavity in a portion of the first semiconductor layer located under where the metallic material layer was removed.

Disclosed are a flat and thin semiconductor substrate, which is formed on a heterogeneous substrate to be easily lifted-off from the heterogeneous substrate, a semiconductor device including the same, and a method of fabricating the same. The semiconductor substrate includes a substrate having a plurality of semispherical protrusions arranged at a predetermined interval on a first plane, and a first semiconductor layer formed on the first plane of the substrate.

Semiconductor substrate and method of fabricating the same

Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including growing a first compound semiconductor layer on a first surface of a substrate, etching the first compound semiconductor layer using HF, KOH, or NaOH to roughen a first surface of the first compound semiconductor layer, forming cavities in the first compound semiconductor layer, separating the first compound semiconductor layer from the first surface of the substrate, flattening the first surface of the substrate after separating the first compound semiconductor layer, and growing a second compound semiconductor layer on the flattened first surface of the substrate.

Method of manufacturing a compound semiconductor substrate in a flattened growth substrate

Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate; a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions; and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions, from light incident on the photodetector. According to the present invention, a small-sized spectrum detector can be provided which can easily detect a peak wavelength distribution included in light of an unknown wavelength, without the use of optical equipment such as a grating or prism, thus dispensing with the need for the optical axis alignment of a complex optical system.

Spectrum detector including a photodector having a concavo-convex patten

A method of fabricating a semiconductor substrate, includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

Method of preparing semiconductor layer including cavities

Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same. The laminate substrate has a GaN layer including a GaN crystal and an AlC layer including an AlC crystal. Further, the method of fabricating the laminate substrate, which has the AlN layer including the AlN crystal and the AlC layer including the AlC crystal, includes supplying a carbon containing gas and an aluminum containing gas to grow the AlC layer.

Laminate substrate and method of fabricating the same

The present invention provides a method of manufacturing a semiconductor substrate that includes a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity formed in the first semiconductor layer under the metallic material layer.

Light emitting device having shared electrodes

Light-emitting device having light-emitting elements with polygonal shape

Embodiments of the invention provide a crystalline aluminum carbide thin film, a semiconductor substrate having the crystalline aluminum carbide thin film formed thereon, and a method of fabricating the same. Further, the method of fabricating the AlC thin film includes supplying a carbon containing gas and an aluminum containing gas to a furnace, to growing AlC crystals on a substrate.

Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same

Light-emitting device having light-emitting elements with a shared electrode

Growing community of inventors

Tokushima, Japan

Shiro Sakai