Hitachi, Ltd.

Other

Hitachi Chemical Company, Ltd.

Shiro Kobayashi

Masahiko Itoh

Akio Takahashi

Masao Suzuki

Tokihito Suwa

Satoru Amou

Mineo Kawamoto

Masashi Miyazaki

Mitsuo Yokota

Hiroyuki Fukai

Masanori Nemoto

Haruo Akahoshi

Yuko Sasaki

Yoshiaki Ichikawa

Akira Minato

Noriyuki Ohnaka

Takashi Honda

Masakiyo Izumiya

Yasumasa Furutani

Masami Kawaguchi

Toshinari Takada

Kanji Yamamoto

Saburo Shoji

Emiko Minowa

Emiko Murofushi

Narutoshi Kazama

Masatoshi Narahara

Tomoyuki Miyazaki

An operation for a chemical of indefinite form is managed so that operation record of the chemical is traceable. An IC tag () is attached to various containers (toc ) each holding a chemical, and a chemical ID to identify the chemical held in each of the containers (a toc) is stored in the IC tag (). When an operation involving a mass change or a change of composition information is carried out, such as apportioning, mixing, reacting, and separating, while the containers (a toc) serve as receivers of the chemical, a record management apparatus () newly generates a chemical ID, and a IC tag terminal () updates the chemical ID in the IC tag () to the new chemical ID. In addition, the record management apparatus () manages a correspondence between the chemical ID stored in the IC tag () (old chemical ID) and the chemical ID newly stored in the IC tag () (new chemical ID).

Record management system and method to trace chemicals

A multilayer circuit board having a resolution in the range of 25-80 &mgr;m, and blind via-holes between layers, the blind via-holes having an aspect ratio in the range of 2.0-0.6 for effecting access between the layers, wherein an insulating layer having the blind via-holes between the layers has a glass transition temperature in the range of 150-220&deg; C., and an epoxy group photosensitive resin composition is used therefor. A photosensitive resin composition having a preferable resolution and heat resistance is obtained. A multilayer circuit board is provided in which the thermal stress generated in the steps of a reflow process, a gold wire bonding process and a repairing process in a bare chip mounting process are reduced, and peeling off of the conductor wiring and deformation of the multilayer circuit board caused by mechanical stresses during the heating processes are suppressed. Accordingly, a decrease in the size and weight of an electronic apparatus is possible.

Multilayer circuit board having insulating layer with via-holes

Photosensitive resin composition, and multilayer printed circuit board using the same

A multilayer circuit board having a resolution in the range of 25-80 .mu.m, and blind via-holes having an aspect ratio in the range of 2.0-0.6 for effecting access between the layers, wherein an insulating layer between said layers having the blind via-holes has a glass transition temperature in the range of 150-220.degree. C., and an epoxy group photosensitive resin composition is used therefor. A photosensitive resin composition having a preferable resolution and heat resistance is obtained. A multilayer circuit board is provided in which the thermal stress generated in the steps of a reflow process, a gold wire bonding process and a repairing process in a bare chip mounting process was reduced, and peeling off of the conductor wiring and deformation of the multilayer circuit board caused by mechanical stresses during the heating processes were suppressed. Accordingly, a decrease in the size and weight of an electronic apparatus is possible.

Multilayer circuit board and photosensitive resin composition used

The invention presents a method of finishing a printed circuit board by using a soluble chloride added to a soft etching solution, the soluble chloride provides a source of chloride ions that beneficially combine with plated copper to form a protective CuCl layer. The protective layer is desirably used to prevent overetching of a copper film in a via or through-hole of a printed wiring board.

Method of finishing a printed wiring board with a soft etching solution

A wiring pattern forming method in which side etch of a wiring pattern at the time of etching the substrate copper foil of a copper plating pattern is reduced to hold down an increase in line resistance, the wiring pattern forming method including the steps of: providing a plating resist pattern of which open area comprises a wiring pattern on the surface of a copper-clad laminate which is obtained by providing a copper foil on an insulating substrate; plating such open area with copper to form a copper plating pattern; then plating a crevice between the copper plating pattern and the plating resist pattern with a solder film by alternately repeating application of a current for a predetermined time period and suspension of the current application for a predetermined time period; and etching away the copper foil by using the solder film as an etching resist to form the wiring pattern.

Method for forming wiring pattern

A lead frame of a plastic encapsulated type semiconductor device is provided with a coating film which has a solderability higher than a solderability of a basic metal of the lead frame, and the coating film has a corrosion potential higher than a corrosion potential of the basic metal. The coating film protects the basic metal from corrosion caused by the plastic encapsulated member. The coating film of the lead frame made of a Fe-Ni alloy is an alloy comprising metal selected from Mo, W, Au, Cr, Cu, metals of the platinum group and a metal selected from Fe, Co, and Ni.

Lead frame for semiconductor device

Nuclear fuel reprocessing plant

A body, particularly a thin layer, of aluminium or aluminium alloy is given a corrosion-resistant bright dense barrier-type protective layer. The layer has a thickness in the range 50 to 500 nm and comprises aluminium oxide and a chelate complex of aluminium and at least one organic chelating compound. The layer is formed by contacting the surface with a solution of the chelating compound of pH 2 to 7 and, optionally, performing oxidative electrolysis.

Aluminium and aluminium alloy having corrosion-resistant protective

A metallization film layer disposed on a semiconductor chip is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities. The metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn. Cu alloy as the metallization film layer improves corrosion resistance by adding a trance amount of a metal element less noble than Cu within such a range where electric conductivity is not much reduced to Cu without lowering high electric conductivity, high heat resistance and high electro-migration resistance of Cu.

Semiconductor device

A semiconductor module comprises semiconductor elements, cooling structures for cooling the semiconductor elements by liquid refrigerant, and a housing for accommodating the semiconductor elements and the cooling structures, wherein within the housing, there is supplied or enclosed sealingly a reactive gas which reacts with ions of a metal constituting the cooling structures to form a chemical compound hard to dissolve to the refrigerant but does not react with the metal itself constituting the cooling structures.

Semiconductor module and an electronic computer using the semiconductor

A silver electrode (4) on a lead frame (2) is bonded to an aluminum electrode (5) on a silicon chip (1) with a copper wire (3). The resulting semiconductor device was immersed in a solution of benzotriazole in ethyl alcohol. An Ag-benzotriazole film (6) was formed on the surface of the silver electrode (4) and a Cu-benzotriazole film (7) was formed on the surface of the copper wire (3), while an Al-benzotriazole film (8) was formed on the surface of the aluminum electrode (5). Even if water penetrates into the semiconductor device, the silver electrode (4), the aluminum electrode (5) and the copper wire (3) are effectively protected by the anti-corrosive Ag-benzotriazole film (6), Cu-benzotriazole film (7) and Al-benzotriazole film (8) to exhibit excellent damp-proof.

Resin packaged semiconductor device having a protective layer made of a

Growing community of inventors

Isehara, Japan

Shiro Kobayashi