Mitsubishi Denki Kabushiki Kaisha

Shiro Hine

Natsuro Tsubouchi

Toshiaki Suhara

Mitsushige Kondou

Keizo Kono

Hidenobu Ishikura

Hiroshi Nishihara

Hiroshi Koyama

Naoki Yutani

Hidekazu Yamamoto

Masahiro Yoneda

Masashi Ueno

Sotoju Asai

Satoshi Hirose

A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.

Solid-state image sensor

An optical IC-type head assembly for recording and for reading information on an optical disc, comprising a substrate, a light guiding layer comprising a dielectric thin film formed monolithically on the substrate, a laser oscillator for injecting the laser beam into the light guiding layer, a grating coupler for converging the laser beam on the optical disc, and a photo detector for receiving the beam reflected by the optical disc and coming out of the grating coupler. In one embodiment the substrate is made of material having cleavability. One side surface of the light guiding layer receiving the laser beam is a break surface formed by cleaving the substrate along the cleavage plane. The photo detector is disposed at the break surface of the light guiding layer. The substrate is preferably made of single crystal material. In another embodiment, a beam splitter is disposed between the laser oscillator and the grating coupler for splitting the reflected beam coming out of the grating coupler into two symmetrical beams. Each split beam forms an acute angle with respect to the optical axis of the reflected beam. The acute angle is preferably less than 30 degrees. The beam splitter may converge each of the split beams at a photo detecting element disposed between the laser oscillator and the grating coupler.

Method of producing optical head assembly

Optical head assembly with efficient light source coupling surface and

An optical head for a laser memory disk in accordance with the present invention comprises: a substrate (1); a waveguide layer (3) formed over a main surface of the substrate; a semiconductor laser (4) for injecting laser beams into the waveguide layer, the semiconductor laser being set in a hollow (17) dug down at least into the waveguide layer; a focusing grating coupler (6) formed on the waveguide layer for focusing the injected laser beams on the memory disk and introducing beams reflected back from the disk into the waveguide; beam splitter means (5) formed on the waveguide layer between the semiconductor laser and the focusing grating coupler, for bisecting each of the reflected beams at a prescribed acute angle; and photodetector means (10) for converting the bisected beams into electrical signals, the photodetector means being provided along both the sides of the semiconductor laser and situated not nearer to the focusing grating coupler as compared with the semiconductor laser.

Optical information processing device

An optical head for a laser memory disk in accordance with the present invention containing a substrate (1); a waveguide layer (3) formed over a main surface of the substrate; a semiconductor laser (4) provided at an end of the waveguide layer for injecting laser beams into the waveguide; a focusing grating coupler (6) formed on the waveguide layer for focusing the injected laser beams on the disk and introducing beams reflected back from the disk into the waveguide; beam splitters (5) formed on the waveguide layer between the semiconductor laser and the focusing grating coupler, for bisecting each of the reflected beams at a prescribed acute angle; photodetectors (10) for converting the bisected beams into electrical signals; optical isolators (17, 18) formed between the semiconductor laser and the photodetectors.

Integrated optical device with improved isolation between the

A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulating film (20) provided between the substrate (11) and the field insulating film (13). The buried insulating film (20) serve to prevent electrons from flowing between the adjacent nMOS transistors (1). Accordingly, occurrence of a color mixture phenomenon, a blooming phenomenon or a smear phenomenon can be suppressed. In addition, when a p-type junction layer (21) is provided on the substrate (11) and a bias power supply (19) is connected between them, and when the voltage is adjusted, the red color sensitivity of a photodiode consisting of an n-type source region (16) in each nMOS transistor (1) can be uniformly and easily adjusted.

Solid-state image sensor manufacturing process

Solid-state image sensor and manufacturing process thereof

Disclosed herein is a selective epitaxial growth method for forming an opening, utilizing anisotropic dry etching, in a silicon oxide film formed on a silicon substrate and epitaxially growing a silicon layer selectively in the opening. The anisotropic dry etching is performed employing a mixed gas of carbon tetrafluoride and hydrogen, and the wall surface of the opening is perpendicular to the major surface of the silicon substrate. The epitaxial growth is achieved under a temperature of 900.degree. to 1100.degree. C. utilizing a mixed gas of a low pressure under 100 Torr. containing dichlorosilane as a silicon source and hydrogen as a carrier gas. A silicon layer thus obtained contains substantially no lattice defects such as a stacked fault.

Selective epitaxial growth method

Semiconductor layers are selectively epitaxially grown in portions having an insulating film removed which is formed on a substrate by selective epitaxial growth under reduced pressure. With respect to a circumferential region outwardly of the removed portions in which the semiconductor elements are to be provided, there are formed one or more removed portions (dummy portions) in which no semiconductor element is provided, thereby making arrangement of the removed portions as even as possible with respect to the entire surface of the insulating film, to overcome position dependency in flatness of the semiconductor layers to be obtained. The semiconductor layers grown in the dummy portions may be left not to have semiconductor elements formed therein.

Method of manufacturing semiconductor device utilizing selective

A cleaning apparatus for a plasma etching system for etching a sample which includes a chamber having an inlet and an outlet, a sample table positioned in the chamber and which further includes a first electrode, a counter electrode positioned in the chamber opposite the first electrode and a plurality of heating mechanisms positioned in the inlet and outlet of the chamber, in the counter electrode and in the sample table for desorbing a reaction product adsorbed on surfaces of the inlet and outlet of the chamber, the counter electrode and the sample table prior to plasma etching of the sample.

Growing community of inventors

Itami, Japan

Shiro Hine