Yangtze Memory Technologies Co., Ltd.

Shiqi Huang

Wei Liu

Siping Hu

Bater Chelon

Liang Chen

Lei Xue

Yanhong Wang

A three-dimensional (3D) memory device includes a plurality of memory stacks arranged along a first direction, and a dummy block structure disposed between two adjacent memory stacks. Each memory stack includes a plurality of first conductive layers and a plurality of first dielectric layers alternately stacked along a second direction perpendicular to the first direction. A channel structure extends through the plurality of first conductive layers and the plurality of first dielectric layers along the second direction. A first isolation structure is disposed between the dummy block structure and one of the plurality of memory stacks. A substrate is disposed under the plurality of memory stacks, the dummy block structure, and the first isolation structure. A second isolation structure is disposed in the substrate extending along the second direction.

Three-dimensional memory device and method for forming the same

Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a plurality of first NAND memory strings and a plurality of first BLs. At least one of the first BLs may be conductively connected to a respective one of the first NAND memory strings. The first semiconductor structure also includes a plurality of first conductor layers, and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs and a plurality of first word line bonding contacts conductively connected to the first conductor layers. A second semiconductor structure includes a plurality of second NAND memory strings and a plurality of second BLs.

Method for forming a three-dimensional (3D) memory device having bonded semiconductor structures

Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first die. The first die includes a semiconductor substrate with transistors formed on a first side of the semiconductor substrate. Further, the first die includes a connection structure extending through the semiconductor substrate and conductively connecting a first conductive layer disposed on the first side of the semiconductor substrate with a second conductive layer disposed on a second side of the semiconductor substrate that is opposite to the first side of the semiconductor substrate. Further, the first die includes a shielding structure disposed in the semiconductor substrate and between the connection structure and at least a transistor. The shielding structure includes a third conductive layer and can alleviate coupling between the connection structure and the transistor.

Semiconductor devices with shielding structures

Bonded three-dimensional memory devices having bonding layers

Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure, which includes a plurality of first NAND memory strings, a plurality of first BLs, at least one of the first BLs being conductively connected to a respective one of the first NAND memory strings; and a first bonding layer having a plurality of first bit line bonding contacts conductively connected to the plurality of first BLs, respectively. The 3D memory device further includes a second semiconductor structure, which includes a plurality of second NAND memory strings, a plurality of second BLs, at least one of the second BLs being conductively connected to a respective one of the second NAND memory strings, and a second bonding layer having a plurality of second bit line bonding contacts conductively connected to the plurality of second BLs, respectively.

Bonded three-dimensional memory devices and methods for forming the same

Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first memory stack having a plurality of first conductor layers and a first bonding layer having a plurality of first word line bonding contacts conductively connected to the plurality of first conductor layers, respectively. A second semiconductor structure includes a second memory stack having a plurality of second conductor layers and a second bonding layer having a plurality of second word line bonding contacts conductively connected to the plurality of second conductor layers, respectively. The 3D memory device also includes a bonding interface between the first bonding layer and the second bonding layer, at which the first word line bonding contacts are in contact with the second word line bonding contacts.

Growing community of inventors

Wuhan, China

Shiqi Huang