Mitsubishi Electric Corporation

Shiori Uota

Takahiro Inoue

Shoichi Orita

Yoshikazu Tanaka

Rei Yoneyama

Hiroshi Yoshida

Haruhiko Murakami

Nobuya Nishida

Fumitaka Tametani

Kyoko Oyama

Koji Tamaki

Shinji Sakai

Tomohide Terashima

Ryo Goto

Takao Tsurimoto

Koichiro Noguchi

Motoki Imanishi

Hiroki Shiota

Keisuke Eguchi

Kenichi Morokuma

Kenichi Suga

Yuki Terado

A semiconductor package includes: a plurality of die pads; a plurality of semiconductor chips provided on the plurality of die pads respectively; a plurality of lead terminals connected to the plurality of semiconductor chips respectively; and a package sealing the plurality of die pads, the plurality of semiconductor chips, and the plurality of lead terminals, the plurality of die pads and the plurality of lead terminals are exposed from a lower surface of the package, and on the lower surface of the package, grooves are provided among the die pads adjacent to one another and among the lead terminals adjacent to one another.

Semiconductor package with plurality of grooves on lower surface

A driving device for a semiconductor element includes: a plurality of detection circuits that detect different types of abnormalities of the semiconductor element; a logic circuit that generates an error signal when at least one of the detection circuits detects an abnormality; an alarm signal generating circuit that receives the error signal and generates an alarm signal made of one or a plurality of pulses, the alarm signal having a different pulse width for each of the detection circuits that has detected an abnormality; and a protection operation determining circuit that determines whether or not a protection function of the semiconductor element is operating based on the error signal and the alarm signal, and shuts off input of a drive signal to the semiconductor element when it is determined that the protection function is operating.

Driving device for semiconductor element

First and second switching regions include first and second gate electrodes respectively. Channel currents of the first and second switching regions are controlled according to electric charge amounts supplied by control signals input to the first and second gate electrodes respectively. The second switching region is connected in parallel with the first switching region. A control section outputs a first control signal for turning-on the first switching region to the first gate electrode and a second control signal for turning-on the second switching region to the second gate electrode. The control section stops outputting the second control signal after a first predetermined period elapses from a start of outputting the first and second control signals, and outputs the second control signal after a second predetermined period elapses from a stop of outputting the second control signal.

Semiconductor device having first and second switching regions respectively controlled by first and second control signals output by a controller

A life estimation circuit includes a temperature detector configured to detect temperature of a power element unit, an inflection point detection unit configured to detect an inflection point of temperature variation in the power element unit based on an output signal from the temperature detector, an operation unit configured to determine an absolute value of a difference between the temperature of the power element unit at an inflection point detected this time and the temperature of the power element unit at an inflection point detected last time, a count circuit configured to count the number of times that the absolute value of the difference in temperature has reached a threshold temperature, and a signal generation unit configured to output, when a count value from the count circuit reaches a threshold number of times, an alarm signal indicating that the power element is about to reach the end of its life.

Life estimation circuit and semiconductor device made using the same

A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

Signal transmission insulative device and power semiconductor module

A semiconductor device includes: a voltage-dividing resistor circuit including first and second resistors connected in series between a power supply potential and a reference potential and outputting a potential at a point of connection between the first and second resistors; a transient response detection circuit including a third resistor having a first end connected to the power supply potential and a capacitor connected between a second end of the third resistor and the reference potential, and outputting a potential at a point of connection between the third resistor and the capacitor; an AND circuit ANDing an output signal of the voltage-dividing resistor circuit and an output signal of the transient response detection circuit; and an output circuit, wherein switching of the output circuit is controlled by an output signal of the AND circuit.

Semiconductor device and semiconductor module

A power device control circuit enters a gate driving signal into a gate terminal of a power device. The power device control circuit includes: a control signal input circuit that receives a power device control signal for control of the power device; a driving system control circuit connected to the control signal input circuit; a driving circuit with a plurality of driving systems, the driving circuit driving the power device in response to a driving circuit control signal received from the driving system control circuit; and a timer circuit that makes switching between the driving systems in response to the driving circuit control signal after elapse of a given period of time from receipt of a predetermined signal, specifically the power device control signal, thereby changing the driving power of the driving system control circuit to drive the power device.

Power device control circuit and power device circuit

A power module includes a current sensing circuit in which a transistor includes an emitter connected to a sense emitter of a current sense element of an IGBT and a base connected to ground, a current sensing resistor including one end thereof connected to a collector of the transistor and the other end thereof connected to a common connection portion. The power module detects, as a current sensing voltage, a potential difference generated by the current sensing resistor based on the common connection portion as a reference, compares the current sensing voltage with a predetermined threshold voltage, and determines whether or not an overcurrent flows through the IGBT according to a magnitude relation therebetween.

Power module

A semiconductor device has a first conductivity-type first semiconductor region, a second conductivity-type second semiconductor region and a second conductivity-type third semiconductor region both located on or above the first semiconductor region, a second conductivity-type fourth semiconductor region between the second semiconductor region and the third semiconductor region, and a first conductivity-type fifth semiconductor region between the third semiconductor region and the fourth semiconductor region. The fourth semiconductor region and the fifth semiconductor region are electrically connected by a conductive member. A distance between the fourth semiconductor region and the third semiconductor region is larger than a width of the fourth semiconductor region.

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Tokyo, Japan

Shiori Uota