Fujitsu Corporation

Shinzou Satou

Kou Ebihara

Tamio Miyamura

Yoshiki Shimauchi

Toru Nakamura

Hitoshi Ohmichi

Masamichi Kamiyama

Toshiyuki Koreeda

Kouji Miki

Keisuke Ishiwata

Hiroyuki Mathuda

Akiyoshi Suzuki

A Bi-CMOS circuit includes a first bipolar, a second bipolar transistor and a CMOS control unit for performing switching controls of the first and second bipolar transistors on the basis of an input signal applied to an input terminal and for controlling an output signal output via the output terminal on the basis of the input signal. A turn-OFF unit temporality couples the base of the first bipolar transistor to a low-potential side power supply line on the basis of a current flowing in said control means when the first bipolar transistor is turned OFF, so that the first bipolar transistor can be rapidly turned OFF.

Bi-CMOS circuits with enhanced power supply noise suppression and

A Bi-CMOS circuit includes a bipolar output stage and a CMOS circuit. The bipolar output stage includes pull-up and pull-down transistors which form an output end. The CMOS circuit receives an input signal and generates a signal for driving the output stage. The CMOS circuit comprises a CMOS inverter for receiving the input signal, a p-channel MOS transistor for driving the pull-up transistor of the bipolar output stage based on the input signal, an n-channel MOS transistor for driving the pull-down transistors of the bipolar output stage based on the input signal, a p-channel MOS transistor for discharging a base of the pull-up transistor based on an output of the CMOS inverter, and an n-channel MOS transistor for discharging a base of the pull-down transistor based on an output of the CMOS inverter.

Bi-CMOS circuit

A Bi-CMOS logic circuit includes first and second bipolar transistors connected in series between a first power source and a second power source. An output signal is drawn from a connection node at which first and second bipolar transistors are connected in series. The Bi-CMOS logic circuit also includes a first impedance element, connected between a base and an emitter of the first bipolar transistor, providing a first impedance, and a second impedance element, connected between a base of the second bipolar transistor and an emitter thereof, providing a second impedance. Further, the Bi-CMOS logic circuit includes a first MOS transistor connected between the collector of the first bipolar transistor and the base thereof, a second MOS transistor connected between the collector of the second bipolar transistor and the base thereof, an input signal being applied to gates of the first and second MOS transistors; and a third MOS transistor connected between the base of the first bipolar transistor and the second power source. The third MOS transistor has the gate thereof connected to the base of the second bipolar transistor.

Bi-CMOS logic circuit having full voltage swing and rapid turn-off

A semiconductor integrated circuit has an output circuit which includes a Bi-CMOS circuit of receiving an input signal, and an ECL circuit. The ECL circuit includes a differential pair for receiving an output of the Bi-CMOS circuit, na an emitter follower for receiving an output of the differentail pair. The Bi-CMOS circuit comprises a CMOS inverter connected in series between power sources; a first npn transistor, a diode, and a second npn transistor which are connected in series between the power sources; and second and third n-channel MOS transistors for turning the second npn transistor ON and OFF. This semiconductor integrated circuit provides a stable, operation and low power consumption.

Integrated semiconductor circuit

A Bi-CMOS logic circuit includes a Bi-CMOS circuit which is composed of first and second bipolar transistors, first and second resistors, and first and second MOS transistors. An input signal is applied to the gates of the first and second MOS transistors, and an output signal is drawn from a connection node at which the first and second bipolar transistors are connected in series between first and second power sources. A third MOS transistor is connected between the collector and emitter of the first bipolar transistor. The input signal is applied to the gate of the third MOS transistor. In place of or in addition to the third MOS transistor, a fourth MOS transistor is provided which is connected between the collector and emitter of the second bipolar transistor. The third and fourth MOS transistors function to decrease roundings of rising and falling edges of the waveform of the output signal.

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Kawasaki, Japan

Shinzou Satou