Canon Kabushiki Kaisha

Shinzo Uchiyama

Matsuomi Nishimura

Kazuo Takahashi

Nobumasa Suzuki

Mikichi Ban

Kyoichi Miyazaki

Takashi Kamono

Hideo Kitagawa

Osamu Ikeda

Takuya Shimada

Yasuhiro Sawada

Shigeki Kato

Satoshi Ohta

A measurement apparatus used for a sorting apparatus for sorting objects includes a scanning unit configured to perform scanning with illumination light which illuminates the object, a control unit configured to control the scanning unit, and a sensor configured to measure reflection light from the illuminated object, wherein the control unit controls the scanning unit to track the object with the illumination light by changing a position of the illumination light in a moving direction of the object and a direction perpendicular to the moving direction.

Sorting apparatus for sorting objects and measurement apparatus

An image processing apparatus configured to perform a process to reduce a color blur in a color motion picture image utilizing a first frame image and a second frame image that has been obtained after the first frame image includes a memory configured to store a first color blur reduction amount used for the process to the first frame image, an estimator configured to calculate a color blur estimation amount in the second frame image through a spatial operation to the second frame image, and a determination part configured to calculate a second color blur reduction amount used for the process to the second frame image so that a difference between the first color blur reduction amount and the color blur estimation amount can fall within a predetermined range.

Image processing apparatus and image processing method

A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200&#xb0; C. to 400&#xb0; C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

Surface modification method

To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.

Plasma processing apparatus having permeable window covered with light shielding film

The present invention provides a precise polishing apparatus and method in which a polished body is polished by rotating a polishing pad having a diameter greater than that of the polished body while urging the polishing pad against the polished body in conditions that a center of the polished body is deviated from a rotation axis of the polishing pad and that the polishing pad is contacted with the entire polished surface of the polished body. The polished body may be a semi-conductor wafer.

Precise polishing apparatus and method

A chemical mechanical polishing apparatus and method can polish a surface of an object very precisely at a high speed irrespective of the presence of a local defect on the surface to be polished. By using a multiplex ring-shaped polishing pad, an effective surface to be polished is increased, and very precise and uniform polishing can be performed at a high speed. By using a plurality of polishing pads, having different diameters smaller than the diameter of the surface to be polished, provided with an interval on the same revolution radius on a revolution table, or by using a plurality of polishing pads, having the same diameter smaller than the diameter of the surface to be polished, provided at positions having different revolution radii on a revolution table, very precise and uniform polishing can be performed.

Chemical mechanical polishing apparatus and method

A polishing apparatus includes a holder for holding a polished body with a polished surface thereof facing upwardly, and a polishing head for holding a polishing pad having a polishing surface having an area smaller than an area of the polished surface while contacting the polishing pad with the polished surface and for rotating the polishing pad around its rotation axis. The polishing head is provided with a driver for revolving the polishing pad around a revolution axis, and the revolution axis and the rotation axis are positioned so that a distance between the revolution axis and the rotation axis becomes smaller than a radius of the polishing pad.

Polishing apparatus including holder and polishing head with rotational axis of polishing head offset from rotational axis of holder and method of using

An apparatus and a method are provided for uniformly conditioning a polishing pad over the entire surface. The conditioning is achieved by contacting the entire polishing surface of the polishing pad with a polishing pad conditioner having a surface area larger than that of the polishing pad.

Growing community of inventors

Utsunomiya, Japan

Shinzo Uchiyama