Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

On Semiconductor Trading, Ltd.

Shinzo Ishibe

Takashi Noma

Hiroyuki Shinogi

Hiroshi Yamada

Katsuhiko Kitagawa

Yuichi Morita

Kazuo Okada

Noboru Okubo

Shigeki Otsuka

Yukihiro Takao

Akira Suzuki

Yusheng Lin

Mitsuru Okigawa

Yoshinori Seki

Keiichi Yamaguchi

Hisao Otsuka

Hiroshi Kanamori

Eiji Kurose

Toshimitsu Taniguchi

Shinya Mori

Hideaki Yoshimi

Hisayoshi Uchiyama

Katsu Horikoshi

A method of forming semiconductor devices includes providing a wafer having a first side and second side, electrically conductive pads at the second side, and an electrically insulative layer at the second side with openings to the pads. The first side of the wafer is background to a desired thickness and an electrically conductive layer is deposited thereon. Nickel layers are simultaneously electrolessly deposited over the electrically conductive layer and over the pads, and diffusion barrier layers are then simultaneously deposited over the nickel layers. Another method of forming semiconductor devices includes depositing backmetal (BM) layers on the electrically conductive layer including a titanium layer, a nickel layer, and/or a silver layer. The BM layers are covered with a protective coating and a nickel layer is electrolessly deposited over the pads. A diffusion barrier layer is deposited over the nickel layer over the pads, and the protective coating is removed.

Semiconductor backmetal (BM) and over pad metallization (OPM) structures and related methods

An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting bodyhaving a penetration holepenetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substratewith an adhesive layerbeing interposed therebetween. A device elementand wiring layersare formed on the front surface of the semiconductor substrate. A second supporting bodyis attached to the first supporting bodywith an adhesive layerbeing interposed therebetween so as to cover the penetration hole. The device elementis sealed in a cavitysurrounded by the semiconductor substrate, the first supporting bodyand the second supporting body

Semiconductor device and method of manufacturing the same

The invention provides a semiconductor device and a method of automatically inspecting the appearance, which achieves proper recognition of the size of a chipping occurring from an end portion of the semiconductor device toward the element forming region by an automatic appearance inspection machine, and prevents a problem of judging an appearance non-defective product as an appearance defective product. A semiconductor device includes a resin layer extending from an element forming region over a guard ring surrounding the element forming region so as to cover these except a plurality of portions of the guard ring, and a chipping extending from a chip end portion of a semiconductor device toward the end portion of the resin layer. An end portion of the guard ring partially exposed from the resin layer is used as a reference to measure a distance y from the end portion of the guard ring to the end portion of the chipping and a distance x from the end portion of the guard ring to the end portion of the resin layer. The device is judged as an appearance non-defective product when y is larger than x or is judged as an appearance defective product when y is equal to x or y is smaller than x.

Semiconductor device and method of automatically inspecting an appearance of the same

A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

Semiconductor device and manufacturing method thereof

The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layerdue to a blue-violet laser.

In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.

The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.

Semiconductor device

This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device componentand a pad electrodeelectrically connected with the device componentare formed on a semiconductor substrate. A supporting memberis bonded to a surface of the semiconductor substratethrough an adhesive layer. There is formed a through-holein the supporting memberpenetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole. A depressed portionis formed in a partial region of the top surface of the supporting member. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor devicein an upper layer to an inside of the depressed portion

The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.

Manufacturing method of semiconductor device with smoothing

This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

Semiconductor device and manufacturing method of the same

The invention is directed to providing a package type semiconductor device with high reliability and smaller size and a method of manufacturing the same. A semiconductor substrate formed with a device element and a pad electrode on its front surface is prepared. The semiconductor substrate is then selectively etched from its back surface to form an opening. A second insulation film is then formed covering the side and back surfaces of the semiconductor substrate. First and second insulation films on the bottom of the opening are then selectively removed to expose a portion of the pad electrode. A wiring layer is then formed along the side surface of the semiconductor substrate, being electrically connected with the exposed pad electrode. An electrode connect layer is then formed covering the wiring layer. A protection layer is then formed covering the back surface of the semiconductor substrate and having an opening in a region for formation of a sidewall electrode. Then, the sidewall electrode is formed in a region exposed by the opening of the protection layer.

The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.

The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.

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Gunma, Japan

Shinzo Ishibe