Honda Motor Co., Ltd.

Shinyu Hirayama

Hitoshi Saito

Shigeto Akahori

Hiroyuki Yamagishi

Shinya Watanabe

Yoko Yamaji

Satoshi Hasegawa

Yasuhisa Saito

Shogo Nagayoshi

Hironori Sawamura

Nobuo Kambara

Noriaki Okamoto

Xihao Tan

Koichiro Sato

Hitoshi Saika

Machie Saitou

Kengo Hori

Yoichi Shimada

Tomohiro Sakogoshi

Kouji Saotome

Kouji Honda Engineering Co Ltd Saotome

Takahiro Morita

Provided is a spot welding method by which welding can be performed successfully while inhibiting occurrence of expulsion. First to third metal plates Wto Wwere welded in which a ratio of a total thickness to a thickness of the first metal plate Wis 7. In Example 1, a peak current value Ais 14.6 kA, an effective current value Ais 7.8 kA, a peak duration Tis 0.1 ms, and a no-peak duration Tis 5.9 ms. As a result, a lower limit current value Ais 6.9 kA, an upper limit current value Ais 8.42 kA, a difference Abetween Aand Ais 1.52 kA, T/Tis 59.0, A/Ais 0.53, and rising time T/falling time Tis 0.53, furthermore, no expulsion occurs, and a welding result was determined to be OK.

Spot welding method

To provide a semiconductor circuit capable of slightly generating inductance in two facing bus bars. Provided with a semiconductor circuit in which a collector-side bus barand an emitter-side bus barare arranged in parallel in a state of being isolated from each other and are fitted in a fixed manner to each other, and a inductance generation portionis provided in one or both of the collector-side bus barand the emitter-side bus bar, the inductance generation portiongenerating a difference in inductance between the collector-side bus barand the emitter-side bus bar

Semiconductor circuit

A capacitor-type power supply unit including:

Capacitor-type power supply unit

A semiconductor inspection device () equipped with a contacting unit () having a contacting side surface () electrically contacting a semiconductor element (), and which inspects the semiconductor element () by making the contacting unit () electrically contact the semiconductor element (). The contacting side surface () is provided with a plurality of projecting units (), and the semiconductor element inspection device () is equipped with a hitting mark detecting unit () configured to detect hitting marks of the projecting unit () transferred to the semiconductor element () when the contacting side surface () contacts the semiconductor element (), and a control unit () configured to determine whether or not an inspection of the semiconductor element () is performed appropriately, on the basis of the hitting marks detected by the hitting mark detecting unit ().

Semiconductor element inspection device and inspection method

Provided are a current application device capable of improving the electrical contact between projections of a contact section and a surface electrode when applying a test current to a semiconductor element, and a method of manufacturing a semiconductor element properly tested by using the current application device. The current application device includes a contact section that has a plurality of projections, which are brought into contact with a surface electrode of a semiconductor element to apply a test current, and a pressing section that presses the contact section against the semiconductor element such that the projections penetrate a film to come in contact with the surface electrode. The contact section has a plurality of the projections on a plane that has been formed in a curved shape, and the curved-shaped plane is deformed into a planar shape by being pressed by the pressing section.

Current application device and manufacturing method of semiconductor element

A current applying device is provided in which a contact body which surface-contacts with an inspection target body makes contact with the surface of the inspection target body uniformly; current can be favorably applied from the contact body to the inspection target body; and the contact body alone can be replaced. A probe devicefor applying current by being in pressure-contact with the power semiconductor H includes: a contact bodywhich surface-contacts with the power semiconductor H; and a plurality of electrically-conductive two-tier springswhich press the contact bodyonto the power semiconductor H; the contact bodyand the plurality of electrically-conductive two-tier springsare separate bodies, and the plurality of electrically-conductive two-tier springselectrify the contact bodywhile providing pressing force F to each of a plurality of sections of the contact body

Current applying device having pressing body and contact body

An angular velocity measuring device () includes a first sensor () (vibration gyro) and a second sensor () (gas rate gyro). The detection output of the first sensor () is inputted to a high pass filter (). Output of the filter () is stored and held in time series in a memory (). Subtraction processing means () successively executes processing of subtracting the output of the filter () &#x3c9;v'(t&#x2212;tsd) before a predetermined time tsd from the output of the filter () &#x3c9;v&#x2032;(). The value thus obtained is successively added to the output of the second sensor () &#x3c9;g(t) by addition processing means () so as to obtain the measurement value of the angular velocity. Thus, it is possible to provide an angular velocity measuring device capable of giving an angular velocity measurement value having a high response and stability at a reasonable cost.

Angular velocity measuring device and leg-moving robot

Growing community of inventors

Tochigi, Japan

Shinyu Hirayama