Hitachi, Ltd.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Shinya Yamaguchi

Mutsuko Hatano

Takeo Shiba

Seong-Kee Park

Mitsuharu Tai

Nobuyuki Sugii

Kiyokazu Nakagawa

Yoshinobu Kimura

Masanobu Miyao

Mikio Hongo

Seong-kee Park

Toshihiko Nakata

Sachio Uto

Makoto Ohkura

Mineo Nomoto

Sedng-Kee Park

Hajime Akimoto

Yoshiaki Toyota

Kyoko Kojima

Takeshi Ishida

Hideo Sato

Seang-kee Park

Katsuyoshi Washio

Takashi Hattori

Takeshi Noda

Akio Yazaki

Junichi Matsuda

Naoya Okada

Shoichi Nakagami

Yasunori Kawanishi

Masashi Namiki

In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layerto a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.

Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium

To provide an image display which is capable of preventing fracturing of a substrate which is attributable to a substrate expansion arising from heating or humidification during a manufacture process, impact in use, or distortion when curved display is conducted, a connection failure between a semiconductor chip and a wiring terminal which are mounted on the substrate, and crack occurring in the substrate in the vicinity of an area where the semiconductor chip is mounted, with no need to add members and with no limit of pulling the wiring around. An image display part is formed on one surface of a flexible substrate, and a groove with a depth not reaching a thickness of the substrate is continuously or intermittently defined in another surface of the substrate.

Image display

One of the pixel electrode and the counter electrode includes, on a protective film formed so as to cover the thin film transistor, a planar metal electrode formed so as to cover a rough surface formed in the reflective pixel part; and a planar transparent electrode formed in the reflective pixel part and the transparent pixel part so as to cover the metal electrode. Another one of the pixel electrode and the counter electrode includes, on an insulating film formed so as to cover the one of the pixel electrode and the counter electrode, a plurality of linear electrodes provided in parallel with one another so as to overlap the one of the pixel electrode and the counter electrode. The transparent electrode included in the one of the pixel electrode and the counter electrode is formed of a transparent conductive film which is formed through application.

Liquid crystal display device

A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUBbidirectionally in the X and &#x2212;X directions. In the inspection method, an inspection beam PROis irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PROis scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

Semiconductor thin film manufacturing method

A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.

Thin film semiconductor device

A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.

Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus

A liquid crystal display device comprises a first electrode disposed in a pixel area including an upper layer of a thin film transistor formed on a main surface of a first insulating substrate, a capacitive insulating layer disposed on the first electrode, and a second electrode disposed on the capacitive insulating layer. The first electrode and the second electrode are formed using a coated transparent electroconductive film and the capacitive insulating layer is formed using a coated insulating film.

Liquid crystal display device which reduces unevenness in an upper surface of at least an electrode

A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.

Method of manufacturing display device

A liquid crystal display device is provided having a transmissive region and a reflective region in a pixel region in which a protective film is formed covering a thin film transistor over a substrate, wherein in the reflective region, an uneven surface is formed on a surface of the protective film, and a capacitor electrode which comprises a transparent conductive film and which is electrically connected to a source electrode of the thin film transistor, a first capacitor insulating film, and a reflective plate which also functions as an opposing electrode and in which the uneven surface formed on the protective film surfaces and appears with the capacitor electrode and the first capacitor insulating film therebetween are formed over the surface of the protective film, a second capacitor insulating film and a pixel electrode are formed covering the reflective region and the transmissive region.

There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DARprovided on the periphery of the pixel region PAR of the active matrix substrate SUBcomposing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

Method for fabricating image display device

The object of the present invention is to provide a document processing apparatus capable of extracting written-in notes on a paper document and printing a document only of written-in notes or a document with a part of written-in notes by a writer left behind, and setting a limit on printing on each written-in note. The above object is achieved by apparatus for processing a document by providing a paper document to print with information for identifying an electronic document as the origin of printing, comprising: written-in notes extracting means for extracting a difference (written-in notes) between the paper document and an electronic document and storing written-notes as image information; text conversion means for converting extracted written-in notes into text as character information, and storing the text; and means for generating a print document by laying out image information of written-in notes and written-in information in text form.

Document processing apparatus and method

In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.

Semiconductor device and semiconductor substrate

A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600&#xb0; C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1&#xd7;10cmor less and a second semiconductor thin film region with the defect density of 1&#xd7;10cmor more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

Thin film semiconductor device, production process and information displays

A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

Growing community of inventors

Mitaka, Japan

Shinya Yamaguchi