Toshiba Memory Corporation

Shinya Takahashi

Ryota Katsumata

Takashi Shimizu

Hisataka Meguro

A semiconductor memory device according to an embodiment, includes a stacked body, first and second semiconductor pillars and a contact. The stacked body includes insulating films and electrode films stacked alternately along a first direction. A configuration of an end portion of the stacked body in a second direction is a stairstep configuration. A step is formed in the stairstep configuration for each of the electrode films. The first semiconductor pillars are disposed in a region of the stacked body where the steps are not formed. The second semiconductor pillars are disposed in a region of the stacked body where the steps are formed. The contact is disposed on the electrode film for each of the steps. When viewed from the first direction, the first and second semiconductor pillars are disposed at some of lattice points of a lattice.

Stacked type semiconductor memory device and method for manufacturing the same

A semiconductor memory device according to one embodiment includes a stacked body, a semiconductor pillar and a plurality of charge storage films. The stacked body includes a plurality of electrode films and air gaps. The plurality of electrode films are disposed to be separated from each other along a first direction. Each of the air gaps is made between the electrode films. The semiconductor pillar extends in the first direction and pierces the stacked body. The plurality of charge storage films are provided between the semiconductor pillar and the plurality of electrode films. The plurality of charge storage films are partitioned every electrode film.

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Yokkaichi, Japan

Shinya Takahashi