Nichia Corporation

Koito Manufacturing Company, Ltd.

Shinya Sonobe

Akinori Yoneda

Shingo Masui

Hiroaki Yuto

Motokazu Yamada

Masato Ono

Hiroyuki Ishida

Masahiko Sano

Yoshiki Inoue

Tsukasa Tokida

Takashi Miyoshi

Masakatsu Tomonari

The method includes the steps of: preparing a single crystal SiC including an upper surfaceand a lower surfaceand provided with a micropipepenetrating from the upper surfaceto the lower surface; forming a first seed layermade of a metal material on the upper surfaceof the single crystal SiC; and forming a first plated layeron the first seed layerso as to close an upper end of the micropipe, using an electroplating method.

Submount and semiconductor laser device

Submount and manufacturing method thereof and semiconductor laser device and manufacturing method thereof

A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.

Semiconductor laser element

A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction.

Semiconductor laser element and method of manufacturing thereof

A light emitting device including a light source and a light transformingmember containing a fluorescent substance for absorbing at least a part of a light emitted from the light source and for emitting a light having a different wavelength. The light source includes a plurality of semiconductor light emitting units, at least a part of which are covered with the light transforming member. A shielding memberbetween a first semiconductor light emitting unitcovered with the light transforming memberand a second semiconductor light emitting unitwhich is adjacent to the semiconductor light emitting unit

Light emitting device

It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.

Semiconductor element

A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type. A first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, with the second electrode surrounding the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed inside of the outline of the first electrode. According to such structure, it is possible to realize a device having high luminous efficiency in use and high reliability.

Semiconductor device

In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p-type nitride semiconductor layer and a high reflectivity in the electrode can be obtained, so that the nitride semiconductor device having excellent external quantum efficiency can be provided.

Growing community of inventors

Anan, Japan

Shinya Sonobe