Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Shinya Shirakawa

Toru Iwagami

Masahiro Kato

Hiroshi Sakata

Tooru Iwagami

Dong Wang

Mamoru Seo

Masaki Sakai

A power semiconductor device M includes: first and second frames for feeding unipolar power from outside; first and second switching units which are series-connected between the first and second frames; an output frame for outputting AC power which is generated by conduction and shutoff of each switching unit to outside; a connecting wire for electrically connecting at least one pair of the first frame and the first switching unit, the first switching unit and the output frame, the output frame and the second switching unit, and the second switching unit and the second frame; a third frame which is arranged close to the output frame; and a branching wire for electrically connecting the first switching unit or the second switching unit to the third frame, whereby sufficiently suppressing surge voltage which takes place within the module even using an external snubber circuit.

Power semiconductor device

A power semiconductor device has first and second power switching elements connected in series, with flywheel diodes, and first and second driver circuits connected to gates of the first and second power switching semiconductor elements. Further, a second diode is connected to a line to be connected to a terminal of at least one of the first and second driver circuits in forward direction such that a current does not flow in the line from the terminal through the second diode. For example, the second diode is connected between a power source terminal of the driver circuit and a controlled power source. In another example, the second diode is connected between an input terminal of the driver circuit and a device for supplying a control signal to the input terminal.

A power semiconductor module has a detector for detecting main circuit current passing through a power semiconductor element. The detector includes first and second circuit patterns; a bonding wire connected at first and second bonding points with the first and second circuit patterns, respectively; and a pair of terminal patterns extended from near the first and second bonding points of the first and second circuit patterns. The detector is designed to detect a potential difference between the pair of terminal patterns generated by flowing main circuit current through the first circuit pattern, the bonding wire and then the second circuit pattern, in order to detect a potential difference across the bonding wire.

Power semiconductor module with detector for detecting main circuit current through power semiconductor element

A power semiconductor device includes a half bridge circuit, a control circuit and a noise removal circuit. The half bridge circuit includes a switching element on a low voltage side and a switching element on a high voltage side, those switching elements serially connected. The control circuit controls a switching operation of the switching element on a low voltage side in the half bridge circuit. The control circuit has a supply-voltage receiving terminal connected to a high voltage side of a power supply for driving the control circuit. The noise removal circuit including, for example, a zener diode, is interposed between the supply-voltage receiving terminal of the control circuit and the low voltage side terminal of the switching element on a low voltage side, to remove noise generated on a conductor connected to a low voltage side terminal of the switching element on a low voltage side.

In an interface between a high-active driving circuit for driving a predetermined semiconductor power element and a microcomputer for controlling an output signal of the driving circuit, the microcomputer comprises a transistor, a collector terminal of which is an output side of the microcomputer; and the driving circuit comprises a first resistor, one end of which is directly connected with the output side of the microcomputer; a Schmidt circuit which is connected in series with the other end of the first resistor; a diode, an anode side of which is connected to a path between the first resistor and the Schmidt circuit; a power supply voltage connected with a cathode side of the diode; and a second resistor, one end of which is grounded and the other end of which is connected with a side of the first resistor being an input terminal of the driving circuit.

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Tokyo, Japan

Shinya Shirakawa