Hitachi-Kokusai Electric Inc.

Kokusai Electric Corporation

Kokusai Electric Co., Ltd.

Shinya Sasaki

Masanori Sakai

Yuji Takebayashi

Hirohisa Yamazaki

Noriaki Michita

Eisuke Nishitani

Yukitomo Hirochi

Tsutomu Kato

Katsuhisa Kasanami

Naoko Matsuyama

Norikazu Mizuno

Kazuhiro Yuasa

Tetsuo Yamamoto

Shintaro Kogura

Yoshihiko Yanagisawa

Hironobu Miya

There is provided a technique includes: a process chamber in which a substrate is processed; a plurality of microwave supply sources configured to supply predetermined microwaves for heating the substrate in the process chamber; and a controller configured to control the microwave supply sources such that while keeping constant a sum of outputs of the microwaves respectively supplied to the substrate from the plurality of microwave supply sources, at least one of the plurality of microwave supply sources is turned off, and periods in which the at least one of the plurality of microwave supply sources is turned off are different from each other.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes a process chamber including a gate valve that opens and closes a loading and unloading port configured to load and unload a substrate, and configured to heat and process the substrate by a heater using a microwave; a substrate transfer chamber including a purge gas distribution mechanism configured to distribute a purge gas supplied from a clean unit capable of introducing the purge gas; a transfer machine installed inside the substrate transfer chamber and configured to transfer the substrate into the process chamber; and a substrate cooling mounting tool configured to cool the substrate transferred from the process chamber by the transfer machine.

Described herein is a technique capable of heating a substrate uniformly by electromagnetic waves. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a heating device configured to heat the substrate by electromagnetic waves; a gas supply mechanism including a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the process chamber; a plasma generator configured to excite the hydrogen-containing gas by plasma; and a controller configured to control the heating device, the gas supply mechanism and the plasma generator to modify the substrate by performing: (a) adding hydrogen atom to a surface of the substrate by supplying the hydrogen-containing gas excited by the plasma generator onto the substrate; and (b) intermittently supplying the electromagnetic waves to heat the substrate after performing (a).

Substrate processing apparatus, method of manufacturing semiconductor device and non-transistory computer-readable recording medium

Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.

Substrate processing apparatus, method of manufacturing semiconductor device and semiconductor device

A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

Substrate processing apparatus and method for manufacturing semiconductor device

The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.

Method for manufacturing semiconductor device background

Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps are provided outside the furnace body of a hot-wall CVD apparatus. The hot-wall reactor furnace body is preheated to a prescribed temperature. Wafers W are loaded into the furnace body and these wafers W are rapidly heated mediately thereafter to the desired temperature by light emitted by the lamps The lamps are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body the wafers W are then loaded into the reactor furnace body and the water temperature is allowed to achieve a uniform state.

Heat treatment method and heat treatment apparatus

Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps are provided outside the furnace body of a hot-wall CVD apparatus. The hot-wall reactor furnace body is preheated to a prescribed temperature. Wafers W are loaded into the furnace body , and these wafers W are rapidly heated immediately thereafter to the desired temperature by light emitted by the lamps . The lamps are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body . It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body , the wafers W are then loaded into the reactor furnace body , and the wafer temperature is allowed to achieve a uniform state.

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Toyama, Japan

Shinya Sasaki