Hamamatsu-photonics K.k.

Kla Tencor Corporation

Shinya Otsuka

Masaharu Muramatsu

Hisanori Suzuki

Yasuhito Yoneta

Yung-Ho Alex Chuang

John Fielden

David Lee Brown

Hirotaka Takahashi

Venkatraman Iyer

Jingjing Zhang

Jehn-Huar Chern

Jehn-Huar Chem

An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Back-illuminated sensor and a method of manufacturing a sensor

Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

Method for producing wiring structure

In a back-illuminated solid-state image pickup device, a first group of charge transfer electrodes (vertical shift register) is present in an imaging region, and a second group of charge transfer electrodes (horizontal shift register) is present in a peripheral region around the imaging region. The light incident surface of the semiconductor substratecorresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.

Rear-surface-incident solid state imaging element and method for manufacturing same

Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

Wiring structure and method for producing wiring structure

A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

Back-illuminated solid-state imaging element

An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Anti-reflection layer for back-illuminated sensor

A solid-state imaging device includes photoelectric converting sections transfer sections first buffer sections second buffer sections first output sections, and second output sections. The photoelectric converting sections generate electric charges in response to incidence of light. The transfer sections transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections and the second buffer sections acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections and the second output sections acquire the electric charges transferred from the first buffer sections and from the second buffer sections respectively, and output signals according to the acquired electric charges.

Solid-state imaging device

A solid-state imaging deviceis provided with a plurality of photoelectric converting portionsand first and second shift registers. Each photoelectric converting portionhas a photosensitive regionwhich generates a charge according to incidence of light and which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming regionwhich forms a potential gradient increasing along a predetermined direction parallel to the long sides forming the planar shape of the photosensitive region, in the photosensitive region,. The plurality of photoelectric converting portionsare juxtaposed along a direction intersecting with the predetermined direction. The first and second shift registersacquire charges transferred from the respective photoelectric converting portionsand transfer them in the direction intersecting with the predetermined direction to output them. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.

Solid-state imaging device having photoelectric converting portions and first and second transfer portions

A solid-state imaging deviceis provided with a plurality of photoelectric converting portions, a plurality of first transferring portions, a plurality of charge accumulating portions, a plurality of second transferring portions, and a shift register. Each photoelectric converting portionhas a photosensitive regionwhich has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming regionwhich forms a potential gradient increasing along a first direction directed from one short side to the other short side forming the planar shape of the photosensitive region. Bach first transferring portionis arranged on the side of the other short side forming the planar shape of the corresponding photosensitive regionand transfers a charge acquired from the corresponding photosensitive region, in the first direction. Each charge accumulating portionaccumulates a charge transferred from the corresponding first transferring portion. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.

A solid-state image pickup deviceincludes: a plurality of photoelectric converterswhich are aligned in a predetermined direction and have a potential made higher toward one side of a direction crossing the predetermined direction; a transferring sectionwhich is provided on one side of the photoelectric convertersin the direction crossing the predetermined direction and transfers charges generated in the photoelectric convertersin the predetermined direction; an unnecessary charge discharging drainwhich is provided adjacent to the photoelectric converteralong the direction crossing the predetermined direction and discharges unnecessary charges generated in the photoelectric converterfrom the photoelectric converter; and an unnecessary charge discharging gatewhich is provided between the photoelectric converterand the unnecessary charge discharging drainand selectively performs cutting-off and release of the flow of unnecessary charges from the photoelectric converterto the unnecessary charge discharging drain

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Hamamatsu, Japan

Shinya Otsuka