Renesas Electronics Corporation

Renesas Technology Corp.

Murata Manufacturing Co., Ltd.

Taiyo Yuden Co., Ltd.

Shinya Osakabe

Yasushi Shigeno

Akishige Nakajima

Hiroyuki Takazawa

Eigo Tange

Takashi Ogawa

Atsushi Kurokawa

Shigeki Koya

Shinichiro Takatani

Masao Yamane

Hidenori Suenaga

Isao Obu

Tomoyuki Ishikawa

Toshiyuki Saito

Hirotaka Takeuchi

Shinnichirou Takatani

A multiplexer includes: a low-pass filter that is connected between a common terminal and a first terminal and is formed of one or more first inductors and one or more first capacitors; a bandpass filter that is connected between the common terminal and a second terminal, has a passband higher than a passband of the low-pass filter, and is formed of one or more second inductors and one or more second capacitors; a high-pass filter that is connected between the common terminal and a third terminal, has a passband higher than the passband of the bandpass filter, and is formed of one or more third inductors and one or more third capacitors; and a fourth inductor that has a first end coupled to the common terminal and a second end coupled to the high-pass filter.

Multiplexer

A bump-equipped electronic component includes a circuit substrate and first and second bumps which are disposed on a principal surface of the circuit substrate and have different cross-sectional areas in a direction parallel or substantially parallel to the principal surface. One of the first and second bumps having a smaller cross-sectional area includes a height adjustment layer disposed in a direction perpendicular or substantially perpendicular to the principal surface.

Bump-equipped electronic component and method for manufacturing bump-equipped electronic component

In a high-frequency circuit, it is necessary to provide galvanic blocking between active elements such as transistors and between an active element and an external terminal, and thus MIM capacitors or the like are used frequently. A MIM capacitor coupled to an external terminal is easily affected by static electricity from outside and causes a problem of electro-static breakdown or the like. In a MIM capacitor formed over a semi-insulating compound semiconductor substrate, a first electrode thereof is coupled to an external pad and to the semi-insulating compound semiconductor substrate, and a second electrode thereof is coupled to the semi-insulating compound semiconductor substrate.

Semiconductor integrated circuit device with transistor and non-transistor regions

The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.

Semiconductor integrated circuit device and radio frequency module

A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodesformed on a semiconductor substrate, at least two gate electrodesdisposed between the two ohmic electrodes, and a conductive regiondisposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistorsare connected in series between the two ohmic electrodes through the wider portion.

Switching element, antenna switch circuit and radio frequency module using the same

The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrodeis formed in an active region defined by an element separation portionon a main surface of a substratecomprising GaAs. The gate electrodeis patterned so as to extend in the vertical direction of the page surface between source electrodesand drain electrodes, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrodedisposed outside the active region is reduced, and the area of a gate padA is reduced.

Semiconductor device

There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

Electronic component for communication device and semiconductor device for switching transmission and reception

In a SPDT switch, a resistor for leak path is connected between a terminal for antenna and a reference potential. The resistor for leak path allows charge capacitances accumulated in electrostatic capacitor elements provided as DC cut capacitors connected to transmission signal terminals and reception signal terminals to be discharged and allows rapid lowering of a potential at the terminal for antenna. In the SPDT switch, a switching characteristic is improved and a delay in the rising edge of a low-power slot which comes after a high-power slot is reduced.

Growing community of inventors

Tokyo, Japan

Shinya Osakabe