National Institute of Advanced Industrial Science and Technology

Shinya Ohmagari

Akiyoshi Chayahara

Yoshiaki Mokuno

Hideaki Yamada

Akinori Seki

Hiroaki Saitoh

Hitoshi Umezawa

Nobuteru Tsubouchi

Fumiaki Kawai

A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cmdue to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 &#x3bc;m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

Stack comprising single-crystal diamond substrate

Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond () is provided with single crystal diamond layers (). One single crystal diamond layer () is formed on a diamond substrate () and contains point defects. The other single crystal diamond layer () is grown on the single crystal diamond layer (). The single crystal diamond layers () have a lower dislocation density than the diamond substrate.

Single crystal diamond and semiconductor element using same

Growing community of inventors

Ikeda, Japan

Shinya Ohmagari