Sharp Kabushiki Kaisha Corporation

Shinya Ohira

Tetsuo Kikuchi

Hajime Imai

Satoshi Horiuchi

Isao Ogasawara

Takashi Terauchi

An active-matrix substrate according to an embodiment of the present invention includes a plurality of first TFTs that are arranged within a display area, an inorganic insulating layer that covers the plurality of first TFTs, an organic insulating layer that is provided on the inorganic insulating layer, a plurality of second TFTs that are arranged within a non-display area, and a source and gate metal connection portion that is positioned within the non-display area, a first conductive layer that is formed from an identical conductive film with a gate wiring line and a second conductive layer that is formed from an identical conductive film with a source wiring line being connected to each other at the source and gate metal connection portion. Each of the plurality of first TFTs is an oxide semiconductor TFT. At least one second TFT among the plurality of second TFTs is covered with the organic insulating layer. The source and gate metal connection portion is not covered with the organic insulating layer.

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Sakai, Japan

Shinya Ohira