Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Osaka University

Alpad Corporation

Samsung Electronics Co., Ltd.

Shinya Nunoue

Toshiki Hikosaka

Koichi Tachibana

Hajime Nago

Naoharu Sugiyama

Shigeya Kimura

Toshiyuki Oka

Shinji Saito

Yoshiyuki Harada

Jumpei Tajima

Jongil Hwang

Hisashi Yoshida

Tomonari Shioda

Iwao Mitsuishi

Yasushi Hattori

Toshihide Ito

Hiroshi Katsuno

Hiroshi Ono

Hung Hung

Rei Hashimoto

Naotoshi Matsuda

Yumi Fukuda

Takahiro Sato

Genichi Hatakoshi

Masahiro Yamamoto

Masahiko Kuraguchi

Masayuki Ishikawa

Keiko Albessard

Masahiro Kato

Masaaki Onomura

Hidetoshi Fujimoto

Shinji Yamada

Johji Nishio

Tatsuo Shimizu

Mariko Suzuki

Ryosuke Hiramatsu

Kazuhiko Itaya

Naomi Shida

Daimotsu Kato

Takayoshi Fujii

Hiroaki Yoshida

Kei Kaneko

Mitsuhiro Kushibe

Kotaro Zaima

Taisuke Sato

Toru Gotoda

Maki Sugai

Satoshi Mitsugi

Aoi Okada

Eiji Muramoto

Kenjiro Uesugi

Chie Hongo

Masaki Tohyama

Kunio Ishida

John Rennie

Kuniaki Konno

Masahiro Koyama

Lisa Sugiura

Tomoko Morioka

Ryuji Katayama

Katsunobu Sasanuma

Tomoyuki Tanikawa

Masahiro Uemukai

Saori Abe

Yosuke Kajiwara

Haruhiko Okazaki

Hisashi Saito

Mizunori Ezaki

Hironori Asai

Aya Shindome

Atsushi Kurobe

Miki Yumoto

Shunsuke Asaba

Masanobu Ando

Kazufumi Shiozawa

Mikio Nakasuji

Tohru Nishibe

Risa Sugiura

Aoi Okoda

Hiroshi Katuno

According to one embodiment, a wafer includes a silicon substrate including a first surface, and a nitride semiconductor layer provided on the first surface. The silicon substrate includes a plurality of first regions that can be distinguished from each other in an X-ray image of the wafer. The first regions are separated from an outer edge region of the silicon substrate. One of the first regions includes a plurality of first linear bodies along a first line direction. An other one of the first regions includes a plurality of second linear bodies along a second line direction. The second line direction crosses the first line direction.

Wafer having silicon substrate with suppressed fractures, semiconductor device, and method for manufacturing the wafer

According to one embodiment, a nitride semiconductor includes a base body, and a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). The first nitride region is between the base body and the second nitride region. The first nitride region includes a first portion and a second portion. The second portion is between the first portion and the second nitride region. An oxygen concentration in the first portion is higher than an oxygen concentration in the second portion. The oxygen concentration in the second portion is not more than 1×10/cm. A first thickness of the first portion in a first direction from the first to second nitride regions is thinner than a second thickness of the second portion in the first direction.

Nitride semiconductor including multi-portion nitride region

According to one embodiment, a nitride semiconductor includes a base body, a nitride member, and an intermediate region provided between the base body and the nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). The first nitride region is between the intermediate region and the second nitride region. The intermediate region includes nitrogen and carbon. A concentration of carbon in the intermediate region is not less than 1.5×10/cmand not more than 6×10/cm.

Nitride semiconductor, semiconductor device, and method for manufacturing nitride semiconductor

According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor layers, and a first insulating member. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first electrode includes a first electrode portion. The second semiconductor layer includes first and second semiconductor portions. The third semiconductor layer includes first and second semiconductor regions. The second semiconductor region is electrically connected to the first semiconductor region and the first electrode portion. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the third electrode.

Semiconductor device

According to one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer including magnesium and AlGaN. The first semiconductor layer includes first, second, and third regions. The first region is between the substrate and the third region. The second region is between the first and third regions. A first concentration of magnesium in the first region is greater than a third concentration of magnesium in the third region. A second concentration of magnesium in the second region decreases along a first orientation. The first orientation is from the substrate toward the first semiconductor layer. A second change rate of a logarithm of the second concentration with respect to a change of a position along the first orientation is greater than a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation.

Semiconductor device and method for manufacturing the same

According to one embodiment, a nitride crystal includes first, second, and third nitride crystal regions. The third nitride crystal region includes Al, and is provided between the first and second nitride crystal regions. A third oxygen concentration in the third nitride crystal region is greater than a first oxygen concentration in the first nitride crystal region and greater than a second oxygen concentration in the second nitride crystal region. A third carbon concentration in the third nitride crystal region is greater than a first carbon concentration in the first nitride crystal region and greater than a second carbon concentration in the second nitride crystal region. A <0001> direction of the first nitride crystal region is one of a first orientation from the second nitride crystal region toward the first nitride crystal region or a second orientation from the first nitride crystal region toward the second nitride crystal region.

Nitride crystal, optical device, semiconductor device, and method for manufacturing nitride crystal

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), a second nitride region including AlGaN (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternatively a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.

Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes AlGaN and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes AlGaN. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

A semiconductor device is provided, including: a substrate; and a first semiconductor layer including magnesium and Al/GaN (0&#x2264;x1&#x3c;1), the first semiconductor layer including a first region, a second region, and a third region, the first region being between the substrate and the third region, the second region being between the first region and the third region, a first concentration of magnesium in the first region being greater than a third concentration of magnesium in the third region, a second concentration of magnesium in the second region decreasing along a first orientation, the first orientation being from the substrate toward the first semiconductor layer, and the first region not including carbon, or a concentration of carbon in the first region being less than the concentration of carbon in the third region.

According to one embodiment, a semiconductor device includes a first crystal region, a second crystal region, a third crystal region, and a fourth crystal region. The first crystal region includes magnesium and AlGaN (0&#x2264;x1&#x3c;1). The second crystal region includes AlGaN (0&#x3c;x2&#x2264;1). The third crystal region is provided between the first crystal region and the second crystal region. The third crystal region includes oxygen and AlGaN (0&#x2264;x3&#x2264;1 and x3&#x3c;x2). The fourth crystal region is provided between the third crystal region and the second crystal region. The fourth crystal region includes AlGaN (0&#x2264;x4&#x3c;1 and x4&#x3c;x2).

According to one embodiment, a nitride crystal includes first, second, and third nitride crystal regions. The third nitride crystal region includes Al, and is provided between the first and second nitride crystal regions. A third oxygen concentration in the third nitride crystal region is greater than a first oxygen concentration in the first nitride crystal region and greater than a second oxygen concentration in the second nitride crystal region. A third carbon concentration in the third nitride crystal region is greater than a first carbon concentration in the first nitride crystal region and greater than a second carbon concentration in the second nitride crystal region. A &#x3c;0001&#x3e; direction of the first nitride crystal region is one of a first orientation from the second nitride crystal region toward the first nitride crystal region or a second orientation from the first nitride crystal region toward the second nitride crystal region.

According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor layers, and a first insulating member. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. A direction from the first partial region toward the second partial region is along a first direction. The first electrode includes a first electrode portion. A direction from the first electrode portion toward the second electrode is along the first direction. A second direction from the third partial region toward the third electrode crosses the first direction. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. At least a portion of the first semiconductor layer is between the third and second semiconductor layers. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the third electrode.

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Chiba-ken, Japan

Shinya Nunoue