Kobe Steel, Ltd.

Samsung Display Co., Ltd.

Other

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Shinya Morita

Aya Miki

Toshihiro Kugimiya

Hiroshi Goto

Byung Du Ahn

Gun Hee Kim

Je Hun Lee

Hiroaki Tao

Jae Woo Park

Satoshi Yasuno

Tomoya Kishi

Kenta Hirose

Ji Hun Lim

Mototaka Ochi

Tsunetake Tsuyoshi

Yeon Hong Kim

Yasuaki Terao

Jun Hyun Park

Kyoung Won Lee

Nobuyuki Kawakami

Sei-yong Park

Narikazu Hashimoto

Yoshihiro Yokota

Yumi Iwanari

Shinya Fukuma

Katsufumi Tomihisa

Yeon Gon Mo

Byung-Du Ahn

Jin Seong Park

Kwang Suk Kim

Gun-Hee Kim

Takeaki Maeda

Jun-Hyung Lim

Jin Hyun Park

Yasuyuki Takanashi

Koji Tabata

A bumper reinforcement includes an aluminum alloy extrusion body having a pair of flanges to be positioned on a vehicle body side and on a collision side and a pair of webs to be positioned in a vehicle vertical direction. The pair of webs connect the pair of flanges at joint portions such that the pair of webs and the pair of flanges form a closed cross section, and the pair of webs do not have a welded portion.

Bumper reinforcement

To compensate for a decrease in reaction force of a bumper reinforcement, which is made of an aluminum alloy extrusion having two end portions subjected to bend forming and crushed portions on the respective end portions, against an impact load in end impact involved in crushing, and compensate for a decrease in energy absorption amount of the bumper reinforcement. Assuming a space between two flanges includes a first region from a center line of the thickness between the flanges to an outer flange and a second region from the center line to an inner flange in a cross section of the crushed portion perpendicular to an extrusion direction, area of the webs located in one (for example, the first region) of the two regions is larger than area of the webs located in the other region (for example, the second region).

Bumper reinforcement for automobile

A door beam including an aluminum alloy extrusion extended in a longitudinal direction and having a pair of webs and a pair of flanges to be positioned on an inside and an outside in a vehicle width direction. The pair of webs connect the pair of flanges at joint portions of each of the pair of webs such that the pair of webs and the pair of flanges form a closed cross section in a direction perpendicular to the longitudinal direction, and each of the pair of webs has a welded portion in a vicinity of a neutral axis passing through a centroid of the closed cross section and parallel to the pair of flanges.

Door beam

Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; an oxide semiconductor layer that is used as a channel layer; and a gate insulator film that is arranged between the gate electrode and the channel layer. The oxide semiconductor layer is configured of at least one metal element that is selected from the group consisting of In, Ga, Zn and Sn (excluding the cases where the oxide semiconductor layer is constituted of metal elements Sn, and at least one of In and Zn). The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.

Thin film transistor and display device

Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor

The oxide of the present invention for thin-film transistors is an In&#x2014;Zn&#x2014;Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In&#x2014;Zn&#x2014;Sn-based oxide are expressed by [Zn], [Sn], and [In], the In&#x2014;Zn&#x2014;Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])&#x2264;0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])&#x3e;0.5.[In]/([In]+[Zn]+[Sn])&#x2264;0.3&#x2003;&#x2003;(1),[In]/([In]+[Zn]+[Sn])&#x2264;1.4&#xd7;{[Zn]/([Zn]+[Sn])}&#x2212;0.5&#x2003;&#x2003;(2),[Zn]/([In]+[Zn]+[Sn])&#x2264;0.83&#x2003;&#x2003;(3),and0.1&#x2264;[In]/([In]+[Zn]+[Sn])&#x2003;&#x2003;(4).According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

Oxide for semiconductor layer of thin-film transistor, semiconductor layer of thin-film transistor having said oxide, and thin-film transistor

This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOfilm having a hydrogen concentration of 3.5 atomic % or lower.

Thin film transistor and method for manufacturing same

Provided is an oxide semiconductor configured to be used in a thin film transistor having high field-effect mobility; a small shift in threshold voltages against light and bias stress; excellent stress resistance. The oxide semiconductor has also excellent resistance to a wet-etchant for patterning of a source-drain electrode. The oxide semiconductor comprises In, Zn, Ga, Sn and O, and satisfies the requirements represented by expressions (1) to (4) shown below, wherein [In], [Zn], [Ga], and [Sn] represent content (in atomic %) of each of the elements relative to the total content of all the metal elements other than oxygen in the oxide.(1.67&#xd7;[Zn]+1.67&#xd7;[Ga])&#x2267;100&#x2003;&#x2003;(1){([Zn]/0.95)+([Sn]/0.40)+([In]/0.4)}&#x2267;100&#x2003;&#x2003;(2)[In]&#x2266;40&#x2003;&#x2003;(3)[Sn]&#x2267;5&#x2003;&#x2003;(4)

Oxide for semiconductor layer in thin film transistor, thin film transistor, display device, and sputtering target

The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor

Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Provided is an oxide-semiconductor-based thin film transistor having satisfactory switching characteristics and stress resistance. Change in threshold voltage through stress application is suppressed in the thin film transistor. The thin film transistor of excellent stability comprises a substrate and, formed thereon, at least a gate electrode, a gate insulating film, oxide semiconductor layers, a source-drain electrode, and a passivation film for protecting the gate insulating film, and oxide semiconductor layers, wherein the oxide semiconductor layers are laminated layers comprising a second oxide semiconductor layer consisting of In, Zn, Sn, and O and a first oxide semiconductor layer consisting of In, Ga, Zn, and O. The second oxide semiconductor layer is formed on the gate insulating film. The first oxide semiconductor layer is interposed between the second oxide semiconductor layer and the passivation film.

Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.

Thin film transistor

A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.

Growing community of inventors

Kobe, Japan

Shinya Morita