Sony Corporation

Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Riken Corporation

Sony Semiconductor Solutions Corporation

Other

Mitsubishi Electric Corporation

Ihi Corporation

Kokusai Electric Co., Ltd.

Shin-etsu Quartz Products Co., Ltd.

Toho Kasei Co., Ltd.

Techno Quartz Inc.

Ihi Aerospace Co., Ltd.

Shinya Morita

Akira Akiba

Naonori Akae

Masato Terasaki

Hitoshi Ohmori

Masahiro Miyake

Yutaka Yamagata

Keishin Yamazaki

Kosuke Takagi

Satoru Murata

Mitsuo Hashimoto

Sei Moriyasu

Koichi Ikeda

Shun Mitarai

Yasuaki Komae

Hiromi Okada

Tomoyuki Matsuda

Takayuki Nakada

Seiyo Nakashima

Yoshikazu Takashima

Masahiro Tada

Tomoshi Taniyama

Takashi Ozaki

Kiyohiko Maeda

Naoki Matsumoto

Sadao Hisakado

Hiroshi Unami

Yoshitaka Abe

Takashi Kinoshita

Munekatsu Fukuyama

Masayoshi Minami

Akihiro Sato

Kazunao Oniki

Satoshi Aizawa

Hirohiko Shimizu

Masayuki Yamada

Yoshihiro Uehara

Nobuhito Shima

Mikihiro Taketomo

Mamoru Ohishi

Tatsuki Jinden

Hiroyuki Kimura

Shinji Aoki

Keitaro Yamashita

Shuhei Saido

Fumiyoshi Abe

Kazuyuki Okuda

Takafumi Sasaki

Kazuhiro Harada

Takatomo Yamaguchi

Hideo Niikura

Shuichi Oka

Tomokazu Matsui

Satoshi Mitani

Kohei Tatsuwaki

Masahiro Tanaka

Kouji Tometsuka

Katsuhiko Takeuchi

Yuji Takamura

Shingo Nohara

Atsushi Hirano

Akinori Tanaka

Yasunobu Koshi

Toshimitsu Miyata

Mitsuhiro Hirano

Yutaka Watanabe

Shigeru Odake

Mitsunori Takeshita

Takayuki Horikoshi

Rei Takamori

Hiroyuki Sasai

Susumu Hogyoku

Tsuyoshi Nishio

Mitsuharu Sonehara

Aritsune Kawabe

Koji Shibata

Kumiko Suzuki

Kozue Hashimoto

Toru Segawa

Manabu Izumi

Yukihito Kitazawa

Shigeo Nakada

Weimin Lin

Koichi Sada

Kazutoshi Katahira

Takayuki Oku

Muneaki Asami

Masashi Suzuki

Kunihiko Saruta

Keisuke Sakashita

Shun Mitari

Yoshiyuki Ueno

Junichi Kato

Masaru Kawata

Hidetaka Kira

Katsuhiko Kada

Noboru Ebizuka

Toru Nakada

Kazuhisa Osaka

A gas supply structure capable of suppressing damage to a structure provided in a reaction tube and made of the non-metallic material such as quartz includes: a gas supply nozzle through which a process gas is supplied into a process chamber in a reaction tube via an opening; a first seal provided so as to cover at least a gap between the opening of the reaction tube and the gas supply nozzle; a holder connected to the gas supply nozzle so as to provide a gap between the gas supply nozzle and the holder; an adapter connected to the holder; a first fixing structure configured to hold the holder and the adapter; and a second seal provided so as to cover at least a gap between the gas supply nozzle and the adapter and maintain a space between the gas supply nozzle and the adapter in an airtight state.

Gas supply structure and substrate processing apparatus

There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening structure including: an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

Furnace opening structure, substrate processing apparatus and method of manufacturing semiconductor device

Provided is a semiconductor device enabling the flatness of a glass substrate to be maintained and enabling the end portion of the glass substrate to be sufficiently protected. A semiconductor device according to the present disclosure includes a glass substrate that includes a first surface, a second surface provided on the opposite side of the first surface, and a first side surface provided between the first surface and the second surface, a wiring that is provided on the first and second surfaces, a metal film that covers the first side surface, and a frame that is provided further on the outer side than the metal film, and that is bonded to the metal film at the first side surface.

Semiconductor device

A technique for connecting a nozzle to a reaction tube while preventing the nozzle from collapsing includes a substrate processing apparatus including: a gas introduction structure comprising a non-metallic material penetrating a side wall of a process vessel and integrated with the side wall as a single structure, wherein a front end thereof protrudes into the process vessel; a nozzle made of a non-metallic material and including: a first straight portion inserted into the gas introduction structure and fluidically communicating with the gas introduction structure; and a second straight portion fluidically communicating with the first straight portion and extending along an inner wall of the process vessel; and a fixing block provided at an inner side of the process vessel and above the gas introduction structure, wherein the fixing block has a groove where the nozzle can be moved in a radial direction of the process vessel.

Substrate processing apparatus, process vessel, method of manufacturing semiconductor device and non-transitory tangible medium

Wafer support of semiconductor manufacturing apparatus

A semiconductor device includes a semiconductor material layer forming a channel layer, a pair of source/drain electrodes formed on the semiconductor material layer, and a gate electrode arranged between the pair of source/drain electrodes and formed on the semiconductor material layer via a gate insulating film. The semiconductor device further includes a connection path using a capacitor in which an insulating film formed in the same layer as the gate insulating film is sandwiched by a pair of electrodes. The capacitor undergoes dielectric breakdown at a voltage lower than a dielectric breakdown voltage of the gate insulating film is formed between at least one of the pair of source/drain electrodes and the gate electrode.

Semiconductor device and electronic equipment

Substrate lifter for semiconductor manufacturing equipment

Provided is an antenna device capable of efficiently transmitting millimeter wave band signals. The antenna device includes plural antennas, a first Butler matrix circuit, and a second Butler matrix circuit. The plural antennas are disposed apart from each other. The first Butler matrix circuit is connected to each of the plural antennas. The second Butler matrix circuit is connected to each of the plural antennas. In each of the plural antennas, a first feed point connected to the first Butler matrix circuit and a second feed point connected to the second Butler matrix circuit are disposed apart from each other.

Antenna device

Described herein is a technique capable of properly attaching a nozzle to a reaction tube. According to one aspect thereof, there is provided a nozzle installation jig including: a lower plate configured to make contact with a process vessel in a vicinity of a lower end opening of the process vessel in which a nozzle is provided; a frame fixed to the lower plate and extending upward with respect to the lower plate; an upper plate fixed to the frame and provided with a sensor configured to detect a position of the nozzle in the process vessel; and a notification device configured to transmit a notification to an operator according to a detection result of the sensor.

Nozzle installation jig

There is provided a technique that includes a first annealing step of annealing the reaction tube; a first cleaning step of cleaning an inner surface of the reaction tube, after the first annealing step, with a liquid including a fluorine compound having a first concentration; a first rinsing step of washing away the fluorine compound used in the first cleaning step with pure water; a second annealing step of annealing the reaction tube; a second cleaning step of cleaning the inner surface of the reaction tube, after the second annealing step, with a liquid including a fluorine compound having a second concentration higher than the first concentration; and a second rinsing step of washing away the fluorine compound used in the second cleaning step with pure water.

Method of cleaning reaction tube, method of manufacturing semiconductor device, and substrate processing apparatus

Separator of substrate processing apparatus

Adiabatic plate for substrate processing appratus

Provided is a technique capable of suppressing the occurrence of by-products by suppressing adhesion of the by-products. A substrate processing apparatus includes: a reaction tube where a substrate is processed; a furnace opening unit disposed at a lower end of the reaction tube and having an upper surface and an inner circumferential surface, the furnace opening unit including: a concave portion disposed on the upper surface; and a convex portion having at least one notch connecting the concave portion to the inner circumferential surface; a cover covering at least the inner circumferential surface with a predetermined gap therebetween; and a gas supply unit configured to supply a gas to the concave portion.

Substrate processing apparatus and furnace opening cover

[Object] There is provided a Butler matrix circuit that makes it possible to further reduce volume and power consumption and to obtain symmetrical radiation characteristics. [Solution] There is provided a Butler matrix circuit including: four processing-circuit-side terminals; four antenna-side terminals; a first 90&#xb0; hybrid coupler coupled to a first processing-circuit-side terminal and a second processing-circuit-side terminal; a second 90&#xb0; hybrid coupler coupled to a third processing-circuit-side terminal and a fourth processing-circuit-side terminal; a third 90&#xb0; hybrid coupler coupled to a first antenna-side terminal and a third antenna-side terminal; a fourth 90&#xb0; hybrid coupler coupled to a second antenna-side terminal and a fourth antenna-side terminal; a first 90&#xb0; delay circuit provided between the first 90&#xb0; hybrid coupler and the third 90&#xb0; hybrid coupler; and a second 90&#xb0; delay circuit provided between the first 90&#xb0; hybrid coupler and the fourth 90&#xb0; hybrid coupler.

Butler matrix circuit, phased array antenna, front-end module, and wireless communication terminal

Growing community of inventors

Tokyo, Japan

Shinya Morita