Sanyo Electric Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Energy Co., Ltd.

Shinya Mori

Kazumichi Shimizu

Tomomichi Ueda

Shuichi Kikuchi

Toshimitsu Taniguchi

Takuya Suzuki

Yumiko Akaishi

Yuji Tsukada

Yuichi Watanabe

Akira Suzuki

Atsushi Ueda

Kyosuke Miyata

Koji Funami

Shinzo Ishibe

Tatsuya Akira

Seiji Kumazawa

Yutaka Yamada

Takayuki Ashida

Takaaki Kassai

Shuichi Takahashi

Junji Yamada

Syunsuke Natsumeda

Ryunosuke Yokoo

Yusuke Tominaga

Sadahiro Hattori

Fumiko Shikakura

Shota Ikeda

Hiroaki Takano

The purpose of the present disclosure is to provide a non-aqueous electrolyte secondary battery that can suppress reductions in rapid charge cycle characteristics. The non-aqueous electrolyte secondary battery according to one embodiment of the present disclosure has a positive electrode, a negative electrode, and a non-aqueous electrolyte. The negative electrode has a negative electrode collector and a negative electrode active material layer that is provided on the negative electrode collector. The negative electrode active material layer includes graphite particles A and graphite particles B as negative electrode active materials. The internal porosity of graphite particles A is no more than 5%, and the internal porosity of graphite particles B is 8%-20%. When the negative electrode active material layer is bisected in the thickness direction, there is a greater amount of graphite particles A in the outer surface-side half than in the negative electrode collector-side half.

Non-aqueous electrolyte secondary battery

A battery producible with high quality and at low costs by decreasing the output of an energy beam used to weld multiple current collecting tabs to an outer case and thus securing the sufficient margin of the output thereof. An aspect of the battery includes an overlapping part K of multiple current collecting tabs connected to a negative electrode of an electrode body being welded to an outer case via a weld group, and the weld group includes a weld part and weld part that are each in the form of a line when they are viewed from the outside of the outer case. The weld as a first weld serves to weld the outer case to all of the multiple current collecting tabs, and the weld as a second weld serves to weld the outer case to only one or some of the multiple current collecting tabs.

Battery and method for producing the same

A sealed cell includes a bottomed cylindrical outer casing can. The outer casing can is formed by nickel-plated iron, and a lead connected to one of a positive electrode and a negative electrode, and the outer casing can, are welded by a welding part formed from the outside surface of the outer casing can toward the lead. The welding part is formed by molten traces and has a first layer and a second layer having a higher nickel concentration than the first layer. The first layer is formed from the lead through to the inside of the outer casing can, the second layer is formed so as to adjoin the first layer on the outside surface side of the outer casing can, and the whole of the first layer is covered with the second layer when the welding part is viewed from the outside of the outer casing can.

Sealed cell and method for manufacturing same

Battery

A welded metal component, includes: a first component; a second component that is stacked on the first component and that is made of a material different from the first component; and at least one welded part that passes through the second component so as to reach the first component, wherein a proportion of an intermetallic compound present in the at least one welded part is from 15% to 60%, and the intermetallic compound includes a metal element that constitutes the first component, and a metal element that constitutes the second component. Further disclosed is a battery comprising the above welded metal component, wherein the second component serves as a bus bar, and the first component serves as an electrode for the battery.

Welded metal component and battery including the same

A nonvolatile semiconductor memory device includes a plurality of memory transistors, a plurality of insulating layers disposed over the transistors, and a plurality of metal layers. Each of the metal layers is disposed on one of the insulating layers. The device also includes a plurality of metal plugs disposed over corresponding memory transistors. Each of the metal plugs filling in a contact hole formed in one of the insulating layers and electrically connecting the metal layers disposed on a top side and a bottom side of the corresponding insulating layer. A top metal layer of the plurality of metal layers is configured to provide bit lines that correspond to the memory transistors, the metal plugs are vertically aligned, and one of the insulating layers is configured so that whether one of the memory transistors is connected to a corresponding bit line is determined by whether a metal plug corresponding to the memory transistor exists in the insulating layer.

Nonvolatile semiconductor memory device

In a semiconductor device having P type and N type wells formed bordering on a step on a P type semiconductor substrate, a first transistor (precise transistor) having a first linewidth is formed on the P type well in a step lower region while a second transistor (high-voltage transistor) having a second linewidth greater than a linewidth of the first transistor is formed on the N type well in a step higher region.

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Growing community of inventors

Hyogo, Japan

Shinya Mori