Hitachi, Ltd.

Shinya Kominami

Ushio Kawabe

Toshikazu Nishino

Mutsuko Hatano

Toshiyuki Aida

Tokuumi Fukazawa

Yoshinobu Tarutani

Kazuma Yokoi

Katsutoshi Tsuchiya

Tomoyuki Seino

Yuuichirou Ueno

Hiroshi Kitaguchi

Takafumi Ishitsu

Tsuneaki Kawaguchi

Yuichi Morimoto

Masatoshi Tanaka

Provided is radiation detection equipment including: a semiconductor radiation detector which has a semiconductor crystal made of thallium bromide; a capacitor which applies a voltage to the semiconductor radiation detector; and at least one DC power source which accumulates positive charges and negative charges in either of electrodes of the capacitor. Herein, a cathode and an anode in the semiconductor radiation detector are formed of at least one kind of a metal selected from gold, platinum and palladium. Further, the DC power source periodically reverses a voltage of accumulating the positive charges and a voltage of accumulating the negative charges in either of the electrodes of the capacitor per interval shorter than 10 min, thereby to apply the resulting voltage thereto.

Radiation detection equipment and nuclear medicine diagnosis device

The present invention provides a radiation measurement device, which shortens periodic interruption periods in the radiation measurements and prevents damage to the amplifier, and a nuclear medicine diagnosis system using such measurement device. The radiation measurement device comprises a semiconductor radiation detector detecting a radiation, a capacitor, which applies voltage to the semiconductor radiation detector, one or more direct current power supplies each capable of making either of positive and negative electric charge collect on one of the electrodes of the capacitor, a constant-current device, which conducts an electric current from the direct current power supplies to the one of the electrodes of the capacitor, and two or more switching devices installed in the wiring connecting the direct current power supplies and the one of the electrodes of the capacitor. Further disclosed is a nuclear medicine diagnosis system equipped with such radiation measurement device.

Radiation measurement device and nuclear medicine diagnosis system

A radiological imaging apparatus using a semiconductor radiation detector to make it possible to reduce a radiation measurement off time that may result from an attempt to avoid polarization, the radiological imaging apparatus comprising a capacitor that applies a voltage to a semiconductor radiation detector that detects a radiation from a subject, first current regulated means for conducting a charge current to the capacitor, and second current regulated means for conducting a discharge current from the capacitor, or comprising a capacitor that applies a voltage to the semiconductor radiation detector, a first resistor that conducts a charge current to and a discharge current from the capacitor, and a second resistor connected in parallel with the first resistor to subject the capacitor to charging and discharging.

Radiological imaging apparatus

Radiological imaging apparatus with current regulated units, imaging apparatus with bed, imaging apparatus with opening and closing units, and power supply unit

Disclosed herein is a radiation imaging apparatus and radiation-imaging-apparatus-based nuclear medicine diagnosis apparatus having a collimator in which a plurality of rectangular through-holes are arranged in a grid pattern and separated by septa is rotated through a predetermined angle as viewed from above in relation to the layout of a plurality of rectangular detectors that are arranged in a grid pattern. The predetermined angle ranges from 20 to 70 degree and more preferably from 30 deg to 60 deg. With this configuration, the influence of sensitivity variations (moire patterns) that are included in an image picked up due to interference with a collimator when pixel type detectors are used is eliminated.

Radiation imaging apparatus and nuclear medicine diagnosis apparatus using the same

Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Superconducting device

Superconducting device having pinning regions

Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Method for forming high T.sub.c superconducting devices

Superconducting device with C-axis orientation perpendicular to current

High Tc superconducting device with weak link between two

A photodetector which operates at a cryogenic temperature by utilizing superconductivity is disclosed. A plurality of mutually spaced-apart superconducting layers are formed in such a manner as to be in contact with a semiconductor layer at least one of the surfaces of which is an incidence surface of light, and means capable of accumulating carriers in the semiconductor layer is disposed. A photodetector having high performance can thus be obtained and can be used as an interface of a system at a cryogenic temperature.

Superconducting photodetector

Growing community of inventors

Mito, Japan

Shinya Kominami