Asahi Glass Company, Limited

Other

Agc Inc.

Tokyo Denpa Co., Ltd.

Shinya Kikugawa

Yoshiaki Ikuta

Akio Koike

Yasutomi Iwahashi

Noriaki Shimodaira

Akio Masui

Shuhei Yoshizawa

Kaname Okada

Hitoshi Mishiro

Satoru Takaki

Susumu Yaba

Akira Takada

Hiroshi Arishima

Hideo Hosono

Kenji Yamada

Hideaki Hayashi

Naoki Sugimoto

Yosuke Sato

Naomichi Miyakawa

Nobuhiro Shinohara

Tohru Ogawa

Yasuo Shinozaki

Tomonori Ogawa

Yasuhiko Akao

Arun Madan

Yasuyuki Takimoto

Shigeyoshi Kobayashi

Keisuke Hanashima

Mitsuhiro Kawata

Yuko Tachibana

Kenta Saito

Kenichiro Terada

Minoru Yamada

Keigo Hino

Noriyuki Agata

Koichi Shibuya

Katsuhiro Matsumoto

Satohiro Enomoto

Long Shao

Stephen Muhl

Yukinori Ohta

Morio Terakado

Takayuki Kawahara

Youichi Kamisuki

Katsuyoshi Suzuki

Shunsuke Susa

Atsushi Yamada

Yutaka Shimizu

Kazumi Yoshida

Masatoshi Nishimoto

The present invention relates to a method of producing a SiC—Si composite component. The method includes preparing a first molded body containing SiC particles by a 3D printing method, wherein the first molded body has a first average pore diameter M;

Method of producing SiC—Si composite component and SiC—Si composite component

A composition for bonding includes tin, germanium, and nickel. A contained amount of germanium is less than or equal to 10 mass %. A contained amount of nickel in mass % is less than or equal to a product of 2.8 multiplied by a term that is the contained amount of germanium in mass % to the power of 0.3.

Composition for bonding

A process for producing a synthetic silica glass optical component which contains at least 1&#xd7;10molecules/cmand has an OH concentration of at most 200 ppm and substantially no reduction type defects, by treating a synthetic silica glass having a hydrogen molecule content of less than 1&#xd7;10molecules/cmat a temperature of from 300 to 600&#xb0; C. in a hydrogen gas-containing atmosphere at a pressure of from 2 to 30 atms.

Synthetic silica glass optical component and process for its production

The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.

Mask blanks

An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.

Artificial quartz member, process for producing the same, and optical element comprising the same

The present invention provides a TiO&#x2014;SiOglass whose coefficient of linear thermal expansion in the range of the time of irradiation with EUV light is substantially zero when used as an optical member of an exposure tool for EUVL and which has extremely high surface smoothness. The present invention relates to a TiO-containing silica glass having a TiOcontent of from 7.5 to 12% by mass, a temperature at which a coefficient of linear thermal expansion is 0 ppb/&#xb0; C., falling within the range of from 40 to 110&#xb0; C., and a standard deviation (&#x3c3;) of a stress level of striae of 0.03 MPa or lower within an area of 30 mm&#xd7;30 mm in at least one plane.

[object Object]

The present invention provides a TiO&#x2014;SiOglass in which when used as an optical member for an exposure tool for EUVL, a thermal expansion coefficient is substantially zero at the time of irradiation with high-EUV energy light, and physical properties of a multilayer can be kept over a long period of time by releasing hydrogen from the glass. The present invention relates to a TiO-containing silica glass having a fictive temperature of 1,100&#xb0; C. or lower, a hydrogen molecule concentration of 1&#xd7;10molecules/cmor more, and a temperature, at which a linear thermal expansion coefficient is 0 ppb/&#xb0; C., falling within the range of from 40 to 110&#xb0; C.

The present invention is to provide a TiO&#x2014;SiOglass whose coefficient of linear thermal expansion at the time of irradiating with high EUV energy light becomes substantially zero when used as an optical member of an exposure tool for EUVL. The present invention relates to a TiO-containing silica glass, having a fictive temperature of 1,000&#xb0; C. or lower, a OH concentration of 600 ppm or higher, a temperature at which the coefficient of linear thermal expansion becomes 0 ppb/&#xb0; C. of from 40 to 110&#xb0; C., and an average coefficient of linear thermal expansion in the temperature range of 20 to 100&#xb0; C., of 50 ppb/&#xb0; C. or lower.

The present invention provides a TiO&#x2014;SiOglass whose coefficient of linear thermal expansion upon irradiation with high EUV energy light is substantially zero, which is suitable as an optical member of an exposure tool for EUVL. The present invention relates to a TiO-containing silica glass having a halogen content of 100 ppm or more; a fictive temperature of 1,100&#xb0; C. or lower; an average coefficient of linear thermal expansion in the range of from 20 to 100&#xb0; C. of 30 ppb/&#xb0; C. or lower; a temperature width &#x394;T, in which a coefficient of linear thermal expansion is 0&#xb1;5 ppb/&#xb0; C., of 5&#xb0; C. or greater; and a temperature, at which a coefficient of linear thermal expansion is 0 ppb/&#xb0; C., falling within the range of from 30 to 150&#xb0; C.

The present invention is to provide a TiO&#x2014;SiOglass having suitable thermal expansion properties as an optical member of an exposure tool for EUVL. The present invention relates to a TiO-containing silica glass having a temperature, at which a coefficient of thermal expansion is 0 ppb/&#xb0; C., falling within the range of 23&#xb1;4&#xb0; C. and a temperature width, in which a coefficient of thermal expansion is 0&#xb1;5 ppb/&#xb0; C., of 5&#xb0; C. or more.

To reduce the change in the refractive index of an irradiated portion of synthetic quartz glass, caused by the irradiation with a high energy light emitted from a light source such as a KrF excimer laser or an ArF excimer laser. A process for producing an optical member made of synthetic quartz glass, wherein the OH group concentration of the optical member is set depending upon the energy density of the laser beam employed, to adjust the ratio R (KJ/cm.sup.2-ppb).sup.-1 of the change in the refractive index of the optical member to the cumulative irradiation energy (KJ/cm.sup.2) by the laser, to be 0.Itoreq.R.Itoreq.0.2, thereby to control the change in the refractive index of the optical member made of synthetic quartz glass by the irradiation with a laser beam to be within a predetermined range.

Optical member made of synthetic quartz glass, and process for its production

For a substrate having fine convexoconcave patterns on its surface, the dimensions of the convexoconcave patterns in a vertical direction of a quartz glass substrate are controlled to be uniform with extreme accuracy and over the entire substrate surface. The quartz glass substrate is made to have a fictive temperature distribution of at most 40&#xb0; C. and a halogen concentration of less than 400 ppm, and the etching rate of the surface of the quartz glass substrate is made uniform, whereby the dimensions of the convexoconcave patterns in a vertical direction of the quartz glass substrate are controlled to be uniform with good accuracy and over the entire substrate surface.

Quartz glass substrate and process for its production

It is to obtain a silica glass suitable as a material for an optical material constituting an optical system to be used for EUVL, which has a low coefficient of thermal expansion from 0 to 100&#xb0; C., and on which formation of concave defects is suppressed in a polishing step to achieve a high level of flatness. A silica glass containing from 0.1 to 10 mass % of Sn calculated as SnOand from 3 to 10 mass % of Ti calculated as TiO, which has a homogeneity of the coefficient of thermal expansion from 0 to 100&#xb0; C. to the temperature of from 50 to 200 ppb/&#xb0; C., a coefficient of thermal expansion from 0 to 100&#xb0; C. of 0&#xb1;250 ppb/&#xb0; C., and a Vickers hardness of at most 650.

Silica glass and optical material

It is to provide a photomask substrate which has a low birefringence and with which polarized illumination can be employed or immersion exposure can be carried out. A photomask substrate made of a synthetic quartz glass to be used for production of a semiconductor employing a light source having an exposure wavelength of at most about 200 nm, which has a birefringence of at most 1 nm/6.35 mm at the exposure wavelength, and of which the amount of decrease in light transmittance is at most 1.0% as a difference in light transmittance at a wavelength of 217 nm, between before and after irradiation with Xe excimer lamp with an illuminance of 13.2 mW/cmfor 20 minutes.

Photomask substrate made of synthetic quartz glass and photomask

It is to provide a silica glass containing TiO, having a wide temperature range wherein the coefficient of thermal expansion is substantially zero. A silica glass containing TiO, which has a TiOconcentration of from 3 to 10 mass %, a OH group concentration of at most 600 mass ppm and a Ticoncentration of at most 70 mass ppm, characterized by having a fictive temperature of at most 1,200&#xb0; C., a coefficient of thermal expansion from 0 to 100&#xb0; C. of 0&#xb1;150 ppb/&#xb0; C., and an internal transmittance Tper 1 mm thickness in a wavelength range of from 400 to 700 nm of at least 80%. A process for producing a silica glass containing TiO, which comprises porous glass body formation step, F-doping step, oxygen treatment step, densification step and vitrification step.

Growing community of inventors

Tokyo, Japan

Shinya Kikugawa