Kyocera Corporation

Shinya Kawai

Yoshitake Terashi

Masanari Kokubu

Tetsuya Kimura

Katsura Hayashi

Hisao Arimune

Youji Furukubo

Takeshi Kyoda

Tatsuji Furuse

Toshifumi Higashi

Akihiko Nishimoto

Katsuhiko Onitsuka

Yasuhide Tami

Mieko Yashima

Jun Fukuda

Hiromi Iwachi

Hitoshi Kumatabara

Kouji Yamamoto

A laminate includes a first green sheet and a second green sheet. The first green sheet includes a first glass including Al and M which is at least one of Sr and Ba. A relationship between Al content and M content is so defined that a position represented by percent by mass of Al in terms of AlOand percent by mass of M in terms of MO on a coordinate system are on or in a range defined by straight lines connecting point A (1, 21), point B (1, 35), point C (9, 45), point D (20, 45), point E (20, 35), and point F (9, 21) on the coordinate system. The second green sheet includes a second glass including Si and B. The first green sheet is integrally laminated with the second green sheet.

Laminate, ceramic substrate and method for making the ceramic substrate

A laminated wiring board comprising: The laminated wiring board offers a high degree of mounting reliability even when it is interposed between the electric device such as a silicon semiconductor device having a small coefficient of thermal expansion and an external circuit board such as a printed board having a large coefficient of thermal expansion.

Laminated wiring board and its mounting structure

A glass ceramic sintered body containing gahnite and cordierite as crystal phases, having a thermal expansion coefficient at 40 to 400&#xb0; C. of not larger than 5&#xd7;10/&#xb0; C., a dielectric constant of not larger than 7 and a Young's modulus of not larger than 150 GPa. A wiring board having an insulating substrate made of the glass ceramic sintered body features very high reliability in the primary mounting and in the secondary mounting.

Glass ceramic sintered body and wiring board using the sintered body

A photoelectric conversion device is provided, which comprises: a substrate serving as an electrode; numerous crystalline semiconductor particles containing a first conductivity-type impurity deposited on the substrate to join thereto; an insulator provided among the crystalline semiconductor particles; and a semiconductor layer containing an impurity of the opposite conductivity-type to which another electrode is connected, which semiconductor layer being provided over the crystalline semiconductor particles, wherein the crystalline semiconductor particles comprise silicon, and the insulator comprises a glass material which contains at least 1 wt % and at most 20 wt % tin oxide. By this arrangement, it is possible to form a good insulator capable of filling spaces among the crystalline semiconductor particles and preventing defects such as cracking, bubbling and abnormal deposition from occurring, and consequently to provide a photoelectric conversion device with high reliability at low cost.

Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon

The porcelain of the present invention comprises 5 to 70% by weight of a non-oxide ceramic filler and 30 to 95% by weight of a borosilicate glass having a glass transition temperature of 800&deg; C. or lower, wherein a weight loss per unit surface area of said non-oxide ceramics is not more than 0.15 g/cm after dipping said non-oxide ceramic having purity of not less than 96% by weight for five minutes in a glass melt obtained by melting said borosilicate glass with heating at 1200&deg; C. Since the porcelain composition can be fired at a low temperature together with a low-resistance metal, the resulting porcelain has a high thermal conductivity, a low dielectric constant, a high heat dissipation property and a reduced apparent signal delay in a high frequency signal and is suited for use as an insulating board in a wiring board.

Porcelain composition, porcelain and method of producing the same, and wiring board and method of producing the same

Glass ceramic sintered product

Wiring substrate including an insulating substrate made of glass ceramics and having Young's modulus of 120 GPa or less, and a wiring circuit layer made of a high-purity metal conductor in concentration of 99% by weight or more formed on the surface of the insulating substrate and/or inside thereof. This wiring substrate may be a multi-layer wiring substrate that has a plurality of wiring circuit layers. The wiring circuit layer is preferably made of a metal foil.

Ceramic wiring substrate and method of producing the same

Dielectric ceramics comprising a diopside oxide crystal phase, at least one kind of crystal phase selected from the group consisting of a quartz crystal phase and a composite oxide crystal phase containing Ti and Mg or Zn, and a glass phase of an amount of not larger than 30% by weight, said dielectric ceramics having a coefficient of thermal expansion of not smaller than 5.5 ppm/&deg; C. at room temperature to 400&deg; C. and a dielectric loss of not larger than 30&times;10,at 60 to 77 GHz. The ceramics can be obtained by the co-firing with a low-resistance metal such as copper or silver, and can be advantageously used for the production of wiring boards to which the signals of particularly high frequencies are applied. The ceramics has a large coefficient of thermal expansion which can be brought close to the coefficient of thermal expansion of the semiconductor element such as of GaAs or of the printed board. The wiring board produced by using the ceramics effectively prevents breakage in the mounting portion of the wiring board that is caused by a difference in the thermal expansion.

Dielectric ceramics

Ceramics for wiring boards having an SiO,crystal phase, a spinel type oxide crystal phase containing Mg or Zn and Al and a composite oxide type crystal phase containing at least Sr, Al and Si, and having a coefficient of thermal expansion of not smaller than 5.5 ppm/&deg; C. at room temperature through up to 400&deg; C., a dielectric constant of not larger than 7, and a dielectric loss of not larger than 50&times;10,at 20 to 30 GHz. The ceramics can be obtained by the co-firing with a low-resistance metal such as copper or silver, and can be advantageously applied for the production of a wiring board for treating, particularly, signals of high frequencies. Furthermore, the ceramics has a coefficient of thermal expansion which is so large as can be brought close to the coefficient of thermal expansion of the semiconductor element such as GaAs or of the printed board. Therefore, the wiring board produced by using the ceramics makes it possible to effectively prevent the mounting portions from being damaged by the difference in the thermal expansion.

Growing community of inventors

Kokubu, Japan

Shinya Kawai