Fujitsu Corporation

Shinya Katoh

Yasutomo Sakurai

Koichi Odahara

Yoshio Hirose

Takumi Kishino

Takumi Takeno

Toru Watabe

Takato Noda

Kazuhiro Nonomura

Toshiyuki Muta

Masatoshi Michizono

A TMR unit connects a plurality of processors by a bus and simultaneously executes the same processing operation. Among the plurality of processors, one of them is a master and the remaining processors are slaves. Information formed by only the master processor is outputted to the bus. Each processor has a multiplex control circuit. The multiplex control circuit compares output information formed by itself with bus information outputted to the bus, thereby detecting a failure and allowing an internal circuit to execute necessary processes.

Information processing system

A round robin arbitration circuit arbitrating N requests has a register storing one of N values, a priority encoder selecting one of N priority patterns according to the value in the register and assigning priorities to the requests based on the selected priority pattern, thereby conducting arbitration between the requests, a circuit updating the value in the register among the N values in a predetermined order synchronously with the arbitration, and a circuit updating the value in the register among the N values in the predetermined order at regular intervals that are asynchronous with the arbitration. At the regular intervals that are asynchronous with the arbitration, a jump is made in the predetermined updating order of the values to be set in the register. Accordingly, even if live-lock occurs, it will be solved when such a jump is made to make the number of priority patterns disagree with the number of requests issued in a loop.

Arbitration circuit for arbitrating requests from multiple processors

A negative type electron beam sensitive resist film of CMS (chloro-methyl poly-styrene) is developed in a dry environment without using a vacuum system. The resist film is selectively exposed to an electron beam to form a latent image of a desired pattern therein and, then, subjected to irradiation by deep UV having a spectral component of 2537 .ANG. or shorter in an oxidizing gas such as atmospheric air. The average thickness decrease speeds during the dry development are 12 .ANG./min and 300 .ANG./min respectively for the portions exposed and unexposed to the electron beam, revealing a contrast ratio of 100 to 4 in terms of the remaining resist film thickness. A film of PGMA (poly-glycidyl metha-acrylate), and other negative type electron beam sensitive resists, may also be developed by the same method.

Dry development method for a resist film and an apparatus therefor

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Kawasaki, Japan

Shinya Katoh