National Institute for Materials Science

Samsung Electronics Co., Ltd.

Shinya Kasai

Kazuhiro Hono

Seiji Mitani

Hiroaki Sukegawa

Tadakatsu Ohkubo

Yukiko Takahashi

Ikhtiar

Kwangseok Kim

Takao Furubayashi

Jun Liu

Xiandong Xu

Hwachol Lee

Masamitsu Hayashi

Rajanikanth Ammanabrolu

Jaivardhan Sinha

Shigeyuki Hirayama

Srinivasan Ananthakrishnan

Pohan Cheng

Varaprasad Bollapragada

According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer provided between a first magnetic layer and a second magnetic layer. The tunnel barrier layer is a crystal body made of a stacked structure of a first insulating layer and a second insulating layer. The crystal body is oriented. The first insulating layer is made of an oxide of MgX(0&#x2264;x&#x2264;0.15). X includes at least one element selected from the group consisting of Al and Ti. The second insulating layer is made of an oxide of an alloy including at least two elements selected from the group consisting of Mg, Al, Zn, and Li. Both the first magnetic layer and the second magnetic layer are made of an alloy including B and at least one element selected from the group consisting of Co and Fe.

Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction

An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layeron a substrate, wherein the first ferromagnetic layerincludes a Heusler alloy, the second ferromagnetic layerincludes a Heusler alloy, the non-magnetic layerincludes a I-III-VIchalcopyrite-type compound semiconductor, and the non-magnetic layerhas a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [&#x3a9;&#x3bc;m] or more and 3 [&#x3a9;&#x3bc;m] or less.

Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used

Provided is a structure having a perpendicular magnetization film which is an (MnGa)N(0&#x3c;x&#x2266;0.5, 0&#x3c;y&#x3c;1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.

Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium

To realize a spintronics device with high performance, it is an object of the present invention to provide a CoFe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A CoFe(GaGe) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25&#x3c;x&#x3c;0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the CoFe(GaGe) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

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Growing community of inventors

Tsukuba, Japan

Shinya Kasai