Asm IP Holding B.v.

Shinya Iwashita

Jan Willem Maes

Charles Dezelah

Elina Färm

Chiyu Zhu

Giuseppe Alessio Verni

Eric James Shero

Viljami J Pore

Marko J Tuominen

Qi Xie

Eva E Tois

Varun Sharma

Andrea Illiberi

Shaoren Deng

Michael Givens

Timothee Blanquart

Ren-Jie Chang

René Henricus Jozef Vervuurt

Daniele Chiappe

Jiyeon Kim

Viraj Madhiwala

Anirudhan Chandrasekaran

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Methods and systems for filling a gap

Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Transition metal nitride deposition method

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

Method of cleaning a surface

Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.

Systems and methods for cobalt metalization

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Helsinki, Finland

Shinya Iwashita