Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Shinya Ito

Shinji Nunotani

Makoto Saito

Kazuo Fujimura

Yoshiaki Sugizaki

Hideto Furuyama

Akihiro Kojima

Yosuke Akimoto

Miyoko Shimada

Ikuo Uematsu

Hideyuki Tomizawa

Mitsuyoshi Endo

Shinichi Sasaki

Hideko Mukaida

Takahito Nakajima

Kengo Furutani

Hiroshi Sanda

Eiichi Nagumo

A method for manufacturing a semiconductor device according to an embodiment includes forming a first insulating film on a semiconductor substrate, the first insulating film being patterned; forming a trench in the semiconductor substrate using the first insulating film as a mask; depositing a second insulating film in the trench and on the first insulating film; removing the second insulating film on the first insulating film using a CMP method; removing a portion of the first insulating film; removing a portion of the second insulating film using isotropic etching; and removing a remaining portion of the first insulating film.

Method for manufacturing semiconductor device

An electrostatic chuck includes a first electrode provided in a first plane, a second electrode provided in a second plane parallel to the first plane, and an insulator. The second electrode includes a plurality of portions which intersect with an intersection line between a region in which the first electrode is orthogonally projected to the second plane and a third plane vertical to the second plane. The insulator is provided between the first and second electrodes.

Electrostatic chuck and semiconductor manufacturing apparatus

According to one embodiment, a method for manufacturing an LED device includes forming a laminated semiconductor layer including a GaN layer of a first conductivity type, a GaN-based luminous layer, and a GaN layer of a second conductivity type stacked in this order on a surface of a substrate, forming a resist pattern on the laminated semiconductor layer, subjecting the laminated semiconductor layer to reactive ion etching using the resist pattern as a mask to selectively remove the laminated semiconductor layer to form an LED element structure part and an electrode connection region, removing the resist pattern, and treating the substrate including the LED element structure part and the electrode connection region with a first etching residue removing aqueous solution.

Method for manufacturing light emitting diode device

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Semiconductor light emitting device and method for manufacturing same

According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side, and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. The film is provided between the second insulating film at the outer periphery and the optical layer. The film has a roughened surface on a side in contact with the optical layer.

Semiconductor light emitting device with a film having a roughened surface

Growing community of inventors

Kanazawa, Japan

Shinya Ito