Sharp Kabushiki Kaisha Corporation

Shinya Honda

Makoto Higashikawa

Yasuaki Ishikawa

A method for manufacturing a photoelectric conversion device including a forming a semiconductor film by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)&#xd7;100(%) is 10% or more and 50% or less.

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Osaka, Japan

Shinya Honda