Toyoda Gosei Co., Ltd.

Meijo University

Shinya Boyama

Yasuhisa Ushida

Yoshiki Saito

Tetsuya Takeuchi

Koji Okuno

Masao Kamiya

Kengo Nagata

Shugo Nitta

Naoyuki Nakada

Shinichi Matsui

Hiroshi Miwa

Hisanori Ishiguro

A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a Natmosphere at not less than 650° C. or in a N+Oatmosphere at not less than 500° C.

Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element

The present invention provides a Group III nitride semiconductor exhibiting reduced contact resistance. A first p-type contact layer of GaN doped with Mg is formed on a p-type cladding layer, using hydrogen as a carrier gas at a growth temperature of 850&#xb0; C. to 1,050&#xb0; C., so as to have a thickness of 10 nm to 300 nm. The Mg concentration is 1&#xd7;10/cmto 1&#xd7;10/cm. Subsequently, a second p-type contact layer of GaN doped with Mg is formed, using nitrogen instead of hydrogen as a carrier gas at a temperature of 600&#xb0; C. to 800&#xb0; C. so as to have a thickness of two monolayers to 100 &#x212b;. The Mg concentration is 2&#xd7;10/cmto 1&#xd7;10/cm.

Method for producing group III nitride semiconductor light-emitting device

The present invention is a method for producing a light-emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700&#xb0; C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700&#xb0; C. which is the temperature of the previous process.

Method for producing a group III nitride semiconductor light-emitting device

A light-emitting element includes a semiconductor laminated structure including a nitride semiconductor, and formed by laminating a first semiconductor layer of a first conductivity type, a light-emitting layer and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor layer being exposed by removing a part of the second semiconductor layer and the light-emitting layer, a concave portion formed in the exposed portion of the first semiconductor layer, a first electrode formed on the concave portion and being in ohmic contact with the first semiconductor layer, and a second electrode being in ohmic contact with the second semiconductor layer and formed surrounding the first electrode.

Light-emitting element

To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes. A mesa having a side surface having an off-angle of 45&#xb0; or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300&#xb0; C. to 420&#xb0; C., to thereby form an aluminum layer having a thickness of 40 &#x212b; or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45&#xb0; or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.

Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device

Growing community of inventors

Kiyosu, Japan

Shinya Boyama