National Institute for Materials Science

Shinya Aikawa

Toshihide Nabatame

Kazuhito Tsukagoshi

Toyohiro Chikyo

The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (), a drain electrode (), a semiconductor layer (), a gate electrode (), and an insulating layer (); wherein the semiconductor layer () contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer () is provided with an SiOlayer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiOlayer and the high-permittivity layers are used to control the threshold voltage.

Growing community of inventors

Tsukuba, Japan

Shinya Aikawa