Toshiba Memory Corporation

Other

Shintaro Sakai

Masahiko Nakayama

Katsuyuki Fujita

Hiroyuki Kanaya

Keisuke Nakatsuka

Yoshinori Kumura

Hiromi Noro

According to an embodiment, a magnetic storage device includes a semiconductor region including a trench; a gate electrode disposed in the trench; an insulation film covering the gate electrode and provided in a manner to fill the trench; and a magnetoresistive effect element including at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the non-magnetic layer in a side surface of the magnetoresistive effect element including the non-magnetic layer being provided on a top surface of the insulation film.

Magnetic storage device

According to one embodiment, a variable change memory includes a bit line, a word line, a memory cell array, a resonance line, a clock generator, and a write driver. The bit line extends in a first direction. The word line extends in a second direction. The memory cell array includes blocks. The each block includes memory cells including a transistor and a variable resistive element. The resonance line connects to a bit line. The clock generator is arranged in the memory cell array and applies a voltage to the resonance line. The write driver supplies a write current to the bit line. The voltage oscillates at the predetermined period and the write current are supplied to the bit line.

Variable change memory and the writing method of the same

According to one embodiment, a magnetic memory includes a cell array includes a plurality of memory cells, each memory cell including a magnetoresistive effect element; and a read circuit to read data from a memory cell selected based on an address signal from among the memory cells. The read circuit selects one determination level from among a plurality of determination levels corresponding to a position of a magnetoresistive effect element in the cell array and uses the selected determination level to perform reading of the data.

Reading magnetic memory based on regions within a cell array

Growing community of inventors

Seoul, South Korea

Shintaro Sakai