Kurita Water Industries Ltd.

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Matsushita Electric Industrial Co., Ltd.

Ando Electric Company

Shintaro Mori

Fumihiko Terayama

Yasuo Moriguchi

Shogo Ujiie

Qian Lin

Yutaka Yoneda

Hideki Nishida

Seiichi Yamazaki

Toshihiro Abe

Masahiro Kitamura

Hajime Iseri

Masafumi Nakamura

Hirokazu Komoriya

Danichi Komatsu

Toshiaki Tsuruoka

A method for improving the heating efficiency of steam wherein a polyamine represented by the following general formula (1) is caused to be present in a steam system to be used for heating. R&#x2014;[NH&#x2014;(CH)]&#x2014;NH. . . (1) wherein Rrepresents a saturated or unsaturated hydrocarbon group having 10 to 22 carbon atoms; m is an integer of 1 to 8, and n is an integer of 1 to 7; and when n is 2 or more, a plurality of NH&#x2014;(CH)may be identical or different.

Method for improving efficiency of steam heating, and papermaking method

When the efficiency of heating with steam is enhanced by adding a condensed water film formation-suppressing amine in a heating step of heating a material to be heated with the steam via a metallic material, the amount of the condensed water film formation-suppressing amine to be added is controlled based on any of the concentration of the condensed water film formation-suppressing amine in a drain, the pH of the drain, the electroconductivity of the drain, the amount of the drain, the amount of the steam, the temperature of the drain, the temperature of the metallic material, and the amount of the metallic material eluted in the drain.

Method for enhancing efficiency of heating with steam, and papermaking method

The present invention provides a corrosion inhibition method which minimizes environmental adverse effects by using phosphate base anticorrosives without using zinc salt base anticorrosives and by reducing the concentration of the phosphate base anticorrosives, enables stable formation of an effective initial protective film, and does not affect water treatment after the formation of the initial protective film. In an initial protective film formation process of forming an initial protective film on a surface of an iron-based metallic member of a water system by adding anticorrosives to the water system, at least one selected from a group consisting of pyrophosphoric acids and pyrophosphates is employed as the anticorrosives and the initial protective film formation process is conducted such that the initial pH at the start of the initial protective film formation process is adjusted to be 5 or more and less than 7 so that the pH at the end of the initial protective film formation process becomes 7 or more.

Corrosion inhibition method

The present invention provides a squelch detecting circuit capable of high-speed transfer while using a reduced number of high-speed operating operational amplifiers to reduce power consumption and the cost of parts. Input differential signals inputted to a differential amplification circuit are amplified and the amplified signal is outputted to a gain proportion circuit. The gain proportion circuit supplies a potential holding circuit with a potential proportional to the amplified signal. The potential holding circuit holds the potential supplied from the gain proportion circuit. A comparator circuit compares the potential held by the potential holding circuit with a reference potential to decide whether it is a squelch state or a non-squelch state and outputs the result as a detect signal.

Squelch detecting circuit

A semiconductor integrated circuit device has two semiconductor integrated circuit chips (and) respectively provided with a plurality of PADs (and), a plurality of LEADs () disposed around arrays of the semiconductor integrated circuit chips, and a plurality of bonding wires (and). The plurality of bonding wires are connected so as not to straddle one semiconductor integrated circuit chip () and allow wiring between the PADs () of the other semiconductor integrated circuit chip () and the LEADs ().

Semiconductor integrated circuit device

An IC test system comprises: a test pattern signal applying section for applying a test pattern signal to an IC to be tested, in accordance with a test program; a simulation section for simulating an operation of the test pattern signal applying section in accordance with a simulation program; and a management device which is connected detachably with the test pattern signal applying section, for managing the operation of the test pattern signal applying section and an operation of the simulation section in accordance with a management program, for storing information about each operation of the test pattern signal applying section and the simulation section, and for managing one of the information about the operation of the simulation section and the information about the operation of the test pattern signal applying section in accordance with the other information.

IC test system and storage medium for the same

In a microcomputer equipped with a built-in temperature sensor, diodes as a temperature sensor are incorporated in a pair of circuit blocks, respectively, and placed in opposite polarity connection to each other. When detecting a temperature of the microcomputer, a constant current If is supplied to the diodes through terminals commonly connected to both the diodes. A voltage Vf generated at each diode is read through terminals located at more adjacent nodes to the diode when compared in position with the terminals.

Microcomputer equipped with built-in temperature sensor

Respective current supply means (I.sub.A, I.sub.B) control conducting periods of corresponding transistors (Q.sub.3, Q.sub.4), whereby conducting periods of driving transistore (Q.sub.6, Q.sub.7) are also controlled. Thus, periods in which both of the driving transistors (Q.sub.6, Q.sub.7) simultaneously enter ON states are reduced and through current (I.sub.S) flowing to the ground level GND through the driving transistors (Q.sub.6, Q.sub.7) is reduced. A pull-down transistor (Q.sub.8) controls a conducting period of the driving transistor (Q.sub.7), whereby periods in which both of the driving transistors (Q.sub.6, Q.sub.7) simultaneously enter ON states are reduced and the through current (I.sub.S) is reduced.

Growing community of inventors

Tokyo, Japan

Shintaro Mori