Tdk Corporation

Shintaro Kon

Yukihiko Shirakawa

Kazuhiro Nakamura

Hiromitsu Nogiwa

Osamu Hirose

Tatsuo Inagaki

Masahiko Konno

Takashi Fukui

Akira Sato

Kaname Ueda

Arata Sato

An electronic component comprises an element body, an external electrode, and an insulating resin coating layer. The element body has a pair of end faces opposed to each other, a pair of principal faces extending so as to connect the pair of end faces and opposed to each other, and a pair of side faces extending so as to connect the pair of principal faces and opposed to each other. The external electrode is formed so as to cover at least a partial region of the principal face and/or a partial region of the side face and has a plating layer comprised of Sn or an Sn alloy. The insulating resin coating layer covers at least the portion of the external electrode formed so as to cover the side face.

Electronic component

An electronic component comprises an element body and an outer electrode. The element body has a pair of end faces opposing each other, a pair of main faces opposing each other while extending so as to connect the pair of end faces to each other, and a pair of side faces opposing each other while extending so as to connect the pair of main faces to each other. The outer electrode is formed on the end face side of the element body and covers a portion of the main and side faces adjacent to the end face. At least a surface of an electrode portion of the outer electrode located on the side face side thereof is covered with an insulating layer.

Electronic component and method of manufacturing electronic component

A method of production of a multilayer ceramic electronic device having dielectric layers with an interlayer thickness of 5 &#x3bc;m or less and internal electrode layers including a base metal, including the steps of firing, then annealing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in 100 layers or more under a reducing atmosphere, treating the annealed stack by first heat treatment under a strong reducing atmosphere of an oxygen partial pressure Pof over 2.9&#xd7;10Pa to less than 6.7&#xd7;10Pa at a holding temperature Tof over 300&#xb0; C. to less than 600&#xb0; C. The stack after the first heat treatment is treated by second heat treatment under an atmosphere of an oxygen partial pressure Pof over 1.9&#xd7;10Pa to less than 4.1&#xd7;10Pa at a holding temperature Tof over 500&#xb0; C. to less than 1000&#xb0; C.

Method of production of multilayer ceramic electronic device

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Nikaho, Japan

Shintaro Kon