Kojundo Chemical Laboratory Co., Ltd.

Kabushikikaisha Kojundokagaku Kenkyusho

Tokyo Electron Limited

Shintaro Higashi

Fumikazu Mizutani

Hidekimi Kadokura

Yoshinori Kuboshima

Yumiko Kawano

Akinobu Kakimoto

Naoyuki Takezawa

Takayuki Mogi

Nobutaka Takahashi

Kaoru Kikukawa

Provided are a CVD source material used in production of a film containing indium and one or more of the other metals, which is stably preservable over the long term and easily handled, and a production method thereof. The CVD source material comprises ≥0.1 mol of one or more compounds of formulae (3) to (6) on the 100 mol basis of a compound of formula (1) or (2). In(CHR) . . . (1), In(C(CH)R) . . . (2), M(CHR) . . . (3), M(CHR). . . (4), M(C(CH)R) . . . (5), and M(C(CH)R). . . (6). In formulae (1) to (6), each R is independently hydrogen or an alkyl group having 1 to 6 carbons, in formulae (3) and (5), Mis a metal excluding indium, in formulae (4) and (6), Mis a metal excluding indium and n is an integer of 2 to 4.

Vapor deposition source material used in production of film containing indium and one or more of the other metals, and the method of producing film containing indium and one or more of the other metals

Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process of supplying an organometallic complex having an aromatic anionic ligand and/or an alkyl ligand into a reaction chamber in which a substrate is installed; and a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber, the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.

Atomic layer deposition method for metal thin films

A precursor for chemical vapor deposition (CVD), which is a precursor for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the precursor. A precursor for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (CHR&#x2014;In) as a main component, also containing at least one component selected from alkylcyclopentediene (CHR), dialkylcyclopentadiene ((CHR)), trisalkylcyclopentadienylindium (III) ((CHR)&#x2014;In) and triscyclopentadienyl indium (III) as secondary components (wherein Rto Rindependently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvents.

Precursor for chemical vapor deposition, and light-blocking container containing precursor for chemical vapor deposition and method for producing the same

Provided is a method for depositing a gallium-containing thin film by atomic layer deposition (ALD) without using radical species such as plasma and ozone using a gallium-containing precursor having a high vapor pressure even at low temperature and high thermal stability. Gallium (I) having a cyclopentadienyl ligand as illustrated below has a sufficiently high thermal decomposition temperature, a sufficiently high vapor pressure at a low temperature, and high reactivity, and as a result, is suitable for low temperature ALD. An atomic layer deposition method of a metal-containing thin film using a precursor represented by the following general formula (1) (In general formula (1), Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms). 

Atomic layer deposition method of metal-containing thin film

Provided are a novel europium compound which has a melting point of 180&#xb0; C. or lower and can be stably supplied by bubbling in a chemical vapor deposition method or an atomic layer deposition method, a precursor for forming a europium-containing thin film based on the compound, and a method for forming a europium-containing thin film using this precursor. A europium-containing thin film is formed using bis(tetramethylmonoalkylcyclopentadienyl)europium as a precursor for forming a europium-containing thin film by a chemical vapor deposition method or anatomic layer deposition method.

Precursor for formation of europium-containing thin film, and method for forming europium-containing thin film

The present invention provides a process for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50&#xb0; C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production. bis(propyltetramethylcyclopentadienyl)strontium is used as an Sr source to form a strontium-containing thin film such as a SrTiOfilm, a (Ba, Sr)TiOfilm by chemical vapor deposition or atomic layer deposition.

Process for forming the strontium-containing thin film

A method is used for forming an SrTiOfilm on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C(CH))is used as the Sr source material. The method performs a plurality of cycles to form the SrTiOfilm. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.

[object Object]

The present invention provides a raw material for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50&#xb0; C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production, and a process for preparing the same. Sr[C(CH)(CH)]is prepared by reacting Na[C(CH)(CH)]or K[C(CH)(CH)]with SrIin THF to produce a THF adduct of Sr[C(CH)(CH)]; evaporating THF and extracting the residue with toluene to give a toluene solution; evaporating toluene and drying the residue under reduced pressure; and heating to 100 to 160&#xb0; C. in vacuo to dissociate and remove THF and distilling.

Growing community of inventors

Sakado, Japan

Shintaro Higashi