Japan Tobacco Inc.

Resonac Corporation

Shintaro Hashimoto

Yukio Nakamura

Takeshi Saitoh

Yoshinobu Ozaki

Tatsuya Yahata

Ryohta Sasaki

Yuma Yoshida

Tetsuya Motodamari

Kohei Taniguchi

Kei Itagaki

Katsuhiko Nawate

Kazutoshi Danjoubara

Shingo Miyamoto

Yuichi Shimayama

Shinji Tsuchikawa

Kouhei Taniguchi

Naoaki Hamamoto

A semiconductor device according to the present disclosure has a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip, in which the support piece contains a cured product of a thermosetting resin composition, or includes a layer containing a cured product of a thermosetting resin composition, and a resin layer or a metal layer.

Semiconductor device having dolmen structure and manufacturing method therefor, and support piece formation laminate film and manufacturing method therefor

A semiconductor device having a dolmen structure, includes: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed around the first chip, on the substrate; and a bonding adhesive piece-attached chip supported by the plurality of support pieces and disposed to cover the first chip, in which the bonding adhesive piece-attached chip includes a second chip, and a bonding adhesive piece provided on one surface of the second chip, and a shear strength of the support pieces and the bonding adhesive piece-attached chip at 250° C. is 3.2 MPa or more.

Semiconductor device having dolmen structure and method for manufacturing same

A support piece formation laminate film according to the present disclosure includes a base material film, a pressure-sensitive adhesive layer, and a support piece formation film, in this order, in which the support piece formation film has a multi-layer structure including at least a metal layer. The support piece formation laminate film is applied to a manufacturing process of a semiconductor device having a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip.

One aspect of the present disclosure is a manufacturing method for a support piece used in the formation of a dolmen structure in a semiconductor device, including processes of: (A) preparing a laminate film including a base material film, an adhesive layer, and a support piece formation film, for example, including a thermosetting resin layer, in this order; and (B) forming support pieces on a surface of the adhesive layer by singulating the support piece formation film, in which the process (B) includes a process of forming a cut in the support piece formation film partway in a thickness direction, and a process of singulating the support piece formation film in a cooled state by expansion, in this order.

Method for manufacturing semiconductor device having dolmen structure, method for manufacturing support piece, and laminated film

Growing community of inventors

Tokyo, Japan

Shintaro Hashimoto