Mitsubishi Electric Corporation

Shintaro Araki

Takaaki Shirasawa

Mitsunori Aiko

Khalid Hassan Hussein

Yuki Hata

Naoki Yoshimatsu

Korehide Okamoto

Rei Yoneyama

Tatsuya Kawase

Shoji Saito

Akira Yamamoto

Yoshikazu Tsunoda

Hiroyuki Masumoto

Nobuyoshi Kimoto

Takeshi Omaru

Hideo Komo

Natsuki Tsuji

Ryoji Murai

Seiichiro Inokuchi

Masayuki Nishiyama

A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.

Semiconductor device comprising semiconductor element; insulating component; lead electrode; and first bonding material, second bonding material, third bonding material, and fourth bonding material made of a same material

A semiconductor device according to the present invention includes a cooler, a semiconductor package provided on an upper surface of the cooler, a metal plate having a main section provided on an upper surface of the semiconductor package, a spring that is provided above the main section and presses the main section toward the upper surface of the semiconductor package with an elastic force and a fixture that fixes the spring to an upper surface of the main section with the spring exerting the elastic force, wherein a surface, which faces the upper surface of the semiconductor package, of the main section is flat.

Semiconductor device

An object of the present invention is to provide a semiconductor device in which the effect of dimensional tolerance can be reduced, and a method for manufacturing the same. The semiconductor device according to the present invention includes: a plurality of cooling plates each having a coolant passage inside; spacers disposed to stack the cooling plates with spaces; at least one semiconductor package disposed on at least one principal surface of at least one of the cooling plates; and a spring plate disposed between adjacent ones of the cooling plates, the spring plate biasing the at least one semiconductor package toward the cooling plates.

Semiconductor device including a spring plate

A semiconductor apparatus includes a metal body in which a through hole is formed, a socket that covers the metal body without closing the through hole, a connection terminal connected to the metal body and exposed to an outside of the socket, a control board having a metal pattern and a circuit pattern, and a semiconductor chip having a control terminal connected to the circuit pattern via the through hole without being in contact with the metal body, the connection terminal being connected to the metal pattern.

Semiconductor apparatus

A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.

According to the present invention, a grease layer having a grease as a constituent material is provided in a filling region lying between a heat dissipation surface that is a bottom surface of a heat dissipation material of a semiconductor module and a surface of a cooler. Further, a seal material is formed on the surface of the cooler and covers the entire side surface region of the grease layer without any gap. The seal material has a liquid curable sealing agent as a constituent material.

A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited. The gate drive circuit controls the gate voltage according to the selective control signal.

Semiconductor device and automobile

Fixing a semiconductor element to a substrate, electrically connecting signal and main terminals to the semiconductor element, a terminal aggregate includes a frame portion, the signal terminal, the main terminal, which has a larger width than the signal terminal, and a dummy terminal, and forming a to-be-encapsulated body in which the substrate, the semiconductor element, and the terminal aggregate are integrated, mounting the to-be-encapsulated body on a lower mold half such that a plurality of blocks formed in the lower mold half are meshed with the signal, main, and dummy terminals with no space left therebetween after the mounting, placing a bottom surface of an upper mold half on top surfaces of the plurality of blocks, and top surfaces of the signal, main, and dummy terminals to form a cavity for the substrate and the semiconductor element, and performing molding by injecting mold resin into the cavity are included.

Semiconductor device manufacturing method and semiconductor device

An object of the present invention is to achieve reductions in size and costs of a vehicle-mounted motor driving control board in a configuration which allows the redundancy of a power supply to be ensured. The vehicle-mounted motor driving control board is formed by one printed circuit board on which are formed two inverter driving circuits for driving two inverter circuits for three-phase motors, and a voltage step-up/step-down driving circuit for driving a voltage step-up/step-down circuit for supplying electric power to the inverter circuits. The vehicle-mounted motor driving control board further includes a first power supply circuit for supplying electric power to part of constituent circuits constituting the voltage step-up/step-down driving circuit and the two inverter driving circuits, and a second power supply circuit for supplying electric power to the remainder of the constituent circuits in the voltage step-up/step-down driving circuit and the two inverter driving circuits.

Vehicle-mounted motor driving control board

A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.

Growing community of inventors

Tokyo, Japan

Shintaro Araki