Ngk Insulators, Inc.

Narumi China Corporation

Seiko Epson Corporation

Sony Corporation

Shinsuke Yano

Takami Hirai

Tsutomu Nanataki

Masahiro Abe

Hirofumi Yamaguchi

Susumu Nishigaki

Masahiko Namerikawa

Hiroshi Kato

Makoto Tani

Tatsumi Sugiura

Yukihisa Takeuchi

Kazuyoshi Shibata

Koji Ikeda

Junzo Fukuda

Masashi Fukaya

Hirokazu Nakanishi

Yoshihiro Tanaka

Motonori Okumura

Naoto Ohira

Tomohiro Yamada

Toshio Nonomura

Tohru Fuwa

Minoru Usui

Munehide Kanaya

Takahiro Katakura

Nobuo Takahashi

Keiichiro Watanabe

Takao Soma

Natsumi Shimogawa

Manabu Isomura

Hiroaki Sakai

Masato Komazawa

Kanji Murano

Takaichi Wada

Yasufumi Horio

Tatsuya Tsuruoka

Tadao Furuta

Shirohito Matsuyama

Osamu Nakagawa

Hiroshi Kawabe

Takanobu Saka

Daishi Tanabe

Toshihisa Mizutani

Hideaki Okubo

Susamu Nishigaki

Atsuo Mizuma

Provided is a sensor node package where the breakage of a package member and/or a lid member due to thermal stress is reduced. The Young's modulus (220 GPa or less) of the package member, the thermal expansion coefficient (2 to 12 ppm/&#xb0; C.) of the package member, the difference (5 ppm/&#xb0; C. or less) in thermal expansion coefficient between the package member and the lid member, and the thickness (3 mm or less) of the lid member are adapted respectively to fall within predetermined ranges, thereby making it possible for the breakage of the package member and/or lid member due to thermal stress to be reduced effectively.

Sensor node package

A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing insulation reliability and high-humidity reliability of the substrate is provided.

Substrate for light-emitting diode

A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing an insulation reliability and high-humidity reliability of the substrate is provided.

A drive circuit is laminated via a high exothermic element disposed on a power circuit, and it is configured so that the average thermal expansion coefficient of the side of the power circuit of the drive circuit board may be larger than the average thermal expansion coefficient of the side opposite to the power circuit. Thereby, the drive circuit board will be curved in the same direction as the power circuit board when the power circuit board is curved due to heat generation from the high exothermic element accompanying the operation of the module. Thereby, in a high-capacity module, while attaining reduction in size and weight, reduction in surge, and reduction in a loss, poor junction between the high exothermic element of the power circuit and the drive circuit board can be suppressed and heat generating from the high exothermic element can be more effectively released.

Circuit board for peripheral circuits of high-capacity modules, and a high-capacity module including a peripheral circuit using the circuit board

An easily-administered technology which demonstrates the intrinsic thermal conductivity improvement effect by addition of non-oxide system compound crystal phase (filler particles) and makes it possible to sufficiently raise the thermal conductivity of a glass-ceramics composite material is provided. In the glass phase which constitutes a glass-ceramics composite material, the quantity of aluminum oxide (AlO) component is increased under a condition where at least either of zinc oxide (ZnO) component or magnesium oxide (MgO) component exists in a predetermined quantity or more. Thereby, the unintended reaction between a non-oxide system compound crystal phase and a glass phase can be suppressed, and the intrinsic thermal conductivity improvement effect by addition of non-oxide system compound crystal phase (filler particles) can be demonstrated.

Glass-ceramics composite material

A glass-ceramics composite material suitable for a low-temperature firing use, which has high moisture resistance and thermal conductivity, is provided. In the glass-ceramics composite material which contains aluminum nitride (AlN) particles as a filler, even in a case where boron oxide (BO) is blended as a flux of a glass phase, by adjusting the composition of raw materials which forms the glass phase to a specific conditions to make the crystal phase which contains boron (B) precipitate at the time of firing of the glass-ceramics composite material.

Problems, such as increase in the electrical resistance in the junction(s) of the terminal(s) of a power semiconductor element and the electrode(s) of a peripheral circuit and decrease in the dielectric strength voltage between adjacent junctions, resulting from the insufficient alignment of the power semiconductor element terminal(s) and the the peripheral circuit electrode(s), in the high-capacity module which is intended to attain reduction in size and weight, reduction in surge, and reduction in loss by lamination of the peripheral circuit onto the power circuit, should be reduced. By preparing level difference(s) in the surface of the peripheral circuit board to more accurately align the peripheral circuit board electrode(s) and the power semiconductor element terminal(s) by contact of the level difference(s) and the lateral face(s) of the power semiconductor element at the time of lamination of the power circuit and the peripheral circuit, the above-mentioned problems can be reduced.

High-capacity module including the peripheral circuit using the circuit board and the circuit board concerned for peripheral circuits of a high-capacity module

A circuit board including a substrate having first and second dielectric layers of first and second dielectrics, the second dielectric containing 8 mass % or more of a glass net former component. At least one portion of an inner layer electrode has approximately two principal surfaces parallel to principal surfaces of the circuit board and a thickness of not less than 50 micrometers in a normal direction of the principal surfaces. The inner layer electrode and second dielectric layer contact with each other, and a ratio t/T of sum total thickness t of the second dielectric layer in contact with the inner layer electrode in a normal direction of the principal surface to sum total thickness T of the first dielectric layer in a normal direction of the principal surface is 0.1 or more.

Circuit board for high-capacity modules, and a production method of the circuit board

The present invention has an objective to provide a circuit board for a peripheral circuit which can transmit outside heat which generates from a high exothermic element, such as a power semiconductor element, while attaining reduction in size and weight, reduction in surge, and reduction in a loss, in high-capacity modules including power modules, such as an inverter. [Solution Means] In a high-capacity module, by laminating a peripheral circuit using a ceramic circuit board with electrode(s) constituted by thick conductor and embedded therein on a highly exothermic element, overheating of the module is prevented by effective heat dissipation via the circuit board while attaining reduction in size and weight, reduction in surge, and reduction in a loss in the module.

The present invention is directed to stably achieve a good thermal conductivity in a glass-ceramic composite material in which aluminum nitride particles are used as filler particles. The glass-ceramic composite material according to the present invention includes a glass matrix and filler particles, each of which is formed by an aluminum nitride particle having a surface layer on which an oxide film is formed, and arranged in the glass matrix. The present invention has characteristic features that the filler particle has a cornerless smooth surface, and that a percentage of the number of filler particles having a sphericity of 0.8 or greater, which is a value of a minor diameter divided by a major diameter, is higher than or equal to 70% on the condition where any fine particle of which particle diameter is smaller than 0.5 &#x3bc;m is excluded from the number of the filler particles.

Glass-ceramic composite material

The present invention intends to provide a small-sized impedance matching device with a small variation in quality and large-current tolerance. The above described intention of the present invention is achieved by an impedance matching device, which comprises a wiring portion comprising a conductor pattern for wiring, embedded inside or formed on the surface of first dielectric material, and either one or both of an inductor portion comprising a conductor pattern for inductor, embedded inside or formed on the surface of the first dielectric material, or a capacitor portion comprising at least one pair of conductor patterns for capacitor and second dielectric material with a dielectric constant larger than that of the first dielectric material, existing between the pair of conductor patterns for capacitor wherein the thicknesses of the conductor pattern for wiring and the conductor pattern for inductor are 20 &#x3bc;m or more.

Impedance matching device

A combiner for a Doherty amplifier includes, on and in a dielectric substrate, a carrier input terminal, a peak input terminal, an output terminal, a combining point for combining an output signal from the carrier amplifier and an output signal from the peak amplifier, a first &#x3bb;/4 line connected between the carrier input terminal and the combining point, a second &#x3bb;/4 line connected between the combining point and the output terminal, and a first directional coupler. The first directional coupler includes a third &#x3bb;/4 line electromagnetically coupled to one, to be monitored, of the first &#x3bb;/4 line and the second &#x3bb;/4 line.

Combiner for Doherty amplifier

A directional coupler includes a dielectric substrate having at least an input terminal and an output terminal on a surface thereof, a main line disposed in the dielectric substrate and extending between the input terminal and the output terminal, a first coupling line for monitoring a level of an input signal which is input through the input terminal, the first coupling line being disposed in the dielectric substrate and having an end electrically connected to a first terminating resistor, and a second coupling line for monitoring a level of a reflected signal which is input through the output terminal, the second coupling line being disposed in the dielectric substrate and having an end electrically connected to a second terminating resistor.

Directional coupler

A circuit board that can decrease thermal stress acting between a semiconductor element and a board in association with temperature alteration and has high mechanical strength (rigidity) as a whole board (including a multilayer wiring layer) is provided. Ceramic base material having a coefficient of thermal expansion close to that of a semiconductor element and inner layer wiring are integrally sintered, and the circuit board is configured so that fine-lined conductor structure corresponding to a multilayer wiring layer in the inner layer wiring has predetermined width, intralayer interval and interlayer interval. Thereby, thermal stress acting between a semiconductor element and the board when the board is exposed to temperature alteration in a condition where it is joined with the semiconductor element is suppressed, rigidity of the board is maintained, and its reliability against temperature cycle is increased.

Laminated and sintered ceramic circuit board, and semiconductor package including the circuit board

In the laminated and sintered ceramic circuit board according to the present invention, at least a portion of the inplane conductor is fine-lined, such that the shape of the cross-section surface of the fine-lined inplane conductor is trapezoid, and the height (a), the length (c) of the lower base and the length (d) of the upper base of the trapezoidal cross-section surfaces, and the interval (b) between the lower bases of the trapezoidal cross-section surfaces of the inplane conductors adjacent in a plane parallel to the principal surfaces of the board meet a certain relation. This provides a laminated ceramic circuit board with low open failure rate, short-circuit failure rate and high reliability against high temperature and high humidity in a downsized and short-in-height (thin) semiconductor package.

Growing community of inventors

Nagoya, Japan

Shinsuke Yano