Mitsubishi Electric Corporation

Paramount Bed Company, Limited

Kabushiki Kaisha Toshiba

Nippon Steel Sumitomo Metal Corporation

Nippon Steel Corporation

Shinsuke Watanabe

Akira Inoue

Makoto Tanaka

Ko Kanaya

Hisao Morimura

Kazuya Yamamoto

Akimichi Hirota

Koichiro Nishizawa

Tetsu Owada

Toshihiko Murakami

Kazuhiro Iyomasa

Seiki Goto

Toshihisa Nabetani

Ren Sakata

Yoshitsugu Yamamoto

Yoshihiro Tsukahara

Kiyoshi Yamaguchi

Noritaka Deguchi

Kenichi Horiguchi

Katsumi Miyawaki

Toshihiko Shiga

Norio Higashisaka

Yoichi Nogami

Toshiaki Kitano

Seiki Gotou

Hideharu Yoshioka

Hidetoshi Iwasaki

Masakuni Akashi

Mitsuaki Suzuki

Masaaki Nagano

Youko Yamamoto

Kou Kanaya

Michiko Ueno

Shinichi Izawa

Tooru Nakao

Hakaru Nakagawa

Yasushi Ariga

Tatsuko Akimoto

Shuji Sato

Michio Kanayama

Kiyoshi 102 Toshiba-Dai-1-Hirayamaryo Yamaguchi

Masaaki 1102 Asahi-Mansion-Musashikoganei Nagano

Tooru 603 Lions-Mansion-Nishikunitachi Nakao

A bed apparatus includes: a mattress mounted on a bed body; and, first cells arranged on both left and right sides in a longitudinal direction of the bed body and is configured to change the body position of a patient on the mattress by inflating the first cells alternately. When the first cells on the left and right sides are inflated, and when a difference in pressure between the first cells on the left and right sides has continuously fallen within a decision pressure value range for a decision pressure value continuation time, the body position of the patient is changed, whereas when the difference has not continuously fallen within the pressure value range for the continuation time or when the difference has continuously fallen out of the pressure value range for the continuation time, change of the body position of the patient will not be performed.

Bed apparatus and patient detection method

The present invention relates to a high-frequency semiconductor device. A conventional high-frequency semiconductor device including an input second-order harmonic matching circuit has such a problem that gain decrease occurs. In a high-frequency semiconductor device () of the present invention, two adjacent unit transistor cells () and () are connected to one input second-order harmonic matching circuit () provided on an upper surface of a semiconductor substrate (). The input second-order harmonic matching circuit () includes a first capacitor (), a first inductor (), a second capacitor (), and a second inductor (). The first capacitor () and the first inductor () resonate at the frequency of a fundamental wave, and each of impedances as seen by input electrodes of the two unit transistor cells () and () is short-circuited at the frequency of a second-order harmonic.

High-frequency semiconductor device

A gate electrode (), a source electrode (), and a drain electrode () is provided on a surface of the semiconductor substrate (). An insulating film () covers the surface of the semiconductor substrate () in a region between the gate electrode () and the drain electrode (). A source field plate () is provided on the insulating film () and not connected with the drain electrode (). A diode () has a cathode connected with the source field plate () and an anode having a constant potential.

Field-effect transistor

A field effect transistor according to the present invention includes a semiconductor substrate, a plurality of drain electrodes provided on a first surface of the semiconductor substrate and extending in a first direction, an input terminal, an output terminal, and a plurality of metal layers provided in the semiconductor substrate apart from the first surface and extending in a second direction crossing the first direction, in which the plurality of metal layers include a first metal layer and a second metal layer which is longer than the first metal layer and which crosses more drain electrodes than the first metal layer when seen from a direction perpendicular to the first surface, and among the plurality of drain electrodes, those having a smaller length of line from the input terminal to the output terminal are provided with more metal layers directly thereunder.

A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

Semiconductor device

A primary object of this invention is to provide a method for operating a continuous casting machine with which a mold can oscillate with a predetermined oscillation waveform since the start of operation of an oscillator. This invention is a method for operating a continuous casting machine, the method comprising: withdrawing a slab from a mold while vertically oscillating the mold with an oscillation waveform represented by the following formula (1) by selecting a value of &#x3c6; according to a value of b so that the following formula (1) satisfies r(0)=0:()=(/2){sin(&#x3c9;+&#x3c6;)+cos 2(&#x3c9;+&#x3c6;)+&#x2003;&#x2003;(1)where r(t): displacement of the mold (mm), S: vibration stroke of the mold S (mm), &#x3c9;: angular velocity (=2&#x3c0;f) (rad/s), f: oscillation frequency of the mold (Hz), t: time(s), &#x3c6;: initial phase (&#xb0;), and b: non-sine coefficient (0&#x3c;b&#x2264;0.25).

Method for operating continuous casting machine

According to the present invention, a semiconductor device includes a transistor provided in a first substrate, a gate pad of the transistor, a conductive bump provided on the gate pad, a second substrate provided above the first substrate, a first electrode passing through from a first face to a second face of the second substrate and connected with the conductive bump on the second face side, a resistor connected to the first face side of the first electrode with its one end and connected to an input terminal with the other end and a second electrode provided adjacent to the first electrode on the first face and connected to the input terminal without interposing the resistor, wherein a gate leakage current of the transistor flows from the first electrode to the input terminal through a base material of the second substrate and the second electrode.

A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes alternately disposed and ohmic-connected with the main surface of the semiconductor substrate; a plurality of gate electrodes Schottky-connected with the main surface of the semiconductor substrate and respectively disposed between the plurality of source electrodes and the plurality of drain electrodes; and a Schottky electrode Schottky-connected with the main surface of the semiconductor substrate, wherein each of the plurality of drain electrodes has first and second portions separated from each other, a sum of widths of the first and second portions of each drain electrode is smaller than a width of one source electrode, the Schottky electrode is disposed between the first portion and the second portion of the drain electrode.

Field effect transistor

A transistor includes: a semiconductor substrate; a plurality of gate electrodes, a plurality of source electrodes, and a plurality of drain electrodes on the semiconductor substrate; a drain pad on the semiconductor substrate and connected to the plurality of drain electrodes; a metal wiring on the semiconductor substrate and arranged spaced apart from, adjacent to and parallel to the drain pad; and a ground pad on the semiconductor substrate and connected to both ends of the metal wiring.

Transistor for amplifying a high frequency signal

A main purpose of the present invention is to provide a continuous casting method for a slab satisfying reductions of center segregation and center porosity, and inhibitions of surface cracks and internal cracks of a slab. The method includes a step of carrying out reduction on a slab having an unsolidified part by horizontal rolls and a step of alternatively carrying out reduction on the slab completely solidified by horizontal rolls and vertical rolls, wherein in the former step, reduction ratio of the slab is more than 0.5% and no more than 3% and a ratio of a width of the unsolidified part at the cross section of the slab to a width of a contact part of the slab and the rolls is 0 to 7.15, and in the latter step, each reduction ratio of the slab by the rolls is 5.4% to 6.8%.

Method for continuously casting slab

Disclosed is a directional coupler including a first hollow portion that is disposed in a first ground conductor and is arranged directly above a first signal conductor and a second signal conductor, and that is constructed of a discontinuous structure that has a function of delaying the phase and that is small with respect to the one-quarter wavelength of an operating frequency.

Directional coupler

Disclosed is a directional coupler including a broadside coupled lineprovided with a main signal line conductorand a secondary signal line conductorarranged in parallel with the main signal line conductor, and an offset broadside coupled lineprovided with a main signal line conductorhaving an end portion connected to an end portion of the main signal line conductorand a second secondary signal line conductorhaving an end portion connected to an end portion of the secondary signal line conductor, and arranged in parallel with the main signal line conductor, in which a coupled line impedance in the broadside coupled lineis lower than a terminal impedance and a coupled line impedance in the offset broadside coupled lineis higher than the terminal impedance.

According to one embodiment, a wireless terminal communicates with a server via wireless base stations. The wireless terminal has devices which transmit a signal in a normal-power transmission mode and the signal in a low-power transmission mode, a power control device which switches the normal-power transmission mode to the low-power transmission mode, or vice versa, and a device which transmits current position data to the server. The server detects the position of the wireless terminal, designates one of the base stations which is close to the wireless terminal, when the wireless terminal is set to the low-power transmission mod, and detects whether the base station designated has a problem or not according to detect the signal from the wireless terminal.

Wireless communication system and wireless communication apparatus, both for use in broadcast wireless transmission

When pressure detected by a pressure sensor connected to a calibration standard cell has continuously fallen within a regulated pressure range at calibration for a regulated duration at calibration, zero-adjustment is performed based on the pressure value detected by the pressure sensor. Then, communication between the plurality of cells is created to perform internal pressure adjustment of the plurality of cells to a predetermined internal pressure value, based on the pressure value detected by the pressure sensor connected to the calibration standard cell and calibrate each of pressure sensors connecting to the plurality of cells, based on the adjusted internal pressure. With this scheme, it is possible to a mattress and the like that can perform zero-point adjustment efficiently by adjusting the zero point in the same manner even if the mattress is formed of a plurality of branches, without releasing the pressure sensor of each cell to atmospheric pressure.

Mattress, pressure sensor calibration method, and bed device

Growing community of inventors

Tokyo, Japan

Shinsuke Watanabe