Shinkawa Ltd.

Kabushiki Kaisha Shinkawa

Shinsuke Tei

Hiroaki Yoshino

Tatsunari Mii

Hayato Kiuchi

Noriko Mori

Kuniyuki Takahashi

Shinichi Akiyama

Shinji Maki

Toshihiko Toyama

Noriko Suzuki

Tishihiko Toyama

This wire bonding apparatus has a capillary, a movement mechanism moving the capillary, and a control unit controlling driving of the movement mechanism. The control unit at least causes execution of: a first process (trajectory a) of lowering the capillary, after a FAB is formed, to pressure bonding height at a first bonding point to form a pressure bonded ball and a column part at the first bonding point; a second process (trajectory b) of moving the capillary horizontally at the pressure bonding height after execution of the first process to scarp off the column part by the capillary; and a third process (trajectory c-k) of repeating a pressing operation at least once after execution of the second process, the pressing operation involving moving the capillary forward and lowering the capillary temporarily during movement so that the capillary presses down on a wire portion positioned over the pressure bonded ball.

Wire bonding apparatus, method for manufacture of semiconductor device, and semiconductor device

A manufacturing method of a semiconductor device includes: a first step of, after joining a wire to an electrode using a capillary, forming a wire part by moving the capillary to a third target point while feeding out the wire; a second step of forming a bent part by moving the capillary to a fourth target point while feeding out the wire; a third step of processing the bent part into a planned cut part by repeating lowering and raising of the capillary for multiple times; and a fourth step of cutting the wire at the planned cut part by raising the capillary with a wire clamper closed to form a pin wire.

Manufacturing method of semiconductor device and wire bonding apparatus

The semiconductor device manufacturing method includes a bonding step of bonding a wire to an electrode (), a looping wire formation step of looping the wire from the electrode () to a dummy electrode () to form a looping wire (), a pressing step of pressing a part of the wire, a moving step of moving the pressed part of the wire directly above the electrode, a wire separation step of separating the wire partially from a wire supply to form a pin wire () extending vertically upward from the electrode (), wherein the looping wire formation step adjusts the looping height of the wire to set the length of the looping wire to a predetermined length.

Semiconductor device manufacturing method

Provided is a method for manufacturing a semiconductor device which connects a first bond point and a second bond point by a wire. The method includes: a ball bonding step in which a crimping ball and a ball neck are formed at the first bond point by ball bonding; a thin-walled portion forming step in which a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball; a wire tail separating step in which after a capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.

Wire bonding apparatus and method for manufacturing semiconductor device

A wire bonding device for performing a wire bonding process includes: a bonding tool for inserting a wire; an ultrasonic vibrator; a drive mechanism for moving the bonding tool; and a control part. The control part performs: a bonding step of bonding the wire to a bonding point; a tail feeding out step of feeding out a wire tail from the wire bonded to the bonding point; a tension applying step of raising the bonding tool to apply tension to the wire while the wire is clamped; a tension release step of lowering the bonding tool to release the tension applied to the wire; and after performing a series of steps including the tension applying step and the tension release step at least once, a tail cutting step of raising the bonding tool to cut the wire tail from the wire.

Wire bonding device, wire cutting method and non-transitory computer-readable recording medium recording program

A wire bonding apparatus includes: a first tensioner which forms, nearer a wire supply side than a bonding tool, a first gas flow for applying a tension toward the wire supply side on a wire; a second tensioner which forms, between the first tensioner and a pressing part of the bonding tool, a second gas flow for applying a tension toward the wire supply side on the wire; and a control part which controls the first tensioner and the second tensioner. The control part implements control, in a predetermined period after a first bonding step for bonding the wire to a first bonding point, to turn off at least the second gas flow of the second tensioner among the first tensioner and the second tensioner or to make at least the second gas flow smaller than in the first bonding step.

Wire bonding apparatus and manufacturing method for semiconductor apparatus

After forming a pressure-bonded ball and a ball neck by bonding an initial ball to a pad, a capillary is moved upward, away from a lead, and then downward, thereby the ball neck is trodden on by a face portion that is on the lead side of the capillary. Subsequently, the capillary is moved upward and then toward the lead until the face portion of the capillary is positioned above the ball neck, thereby a wire is folded back toward the lead. Then, the capillary is moved downward such that a side of the wire is pressed by the capillary against the ball neck that has been trodden on. After the capillary is moved obliquely upward toward the lead and then looped toward the lead, the wire is pressure-bonded to the lead.

Wire bonding method and semiconductor device

Wire bonding method for reducing height of a wire loop in a semiconductor device, including a first bonding step of bonding an initial ball formed at a tip end of a wire onto a first bonding point using a capillary, thereby forming a pressure-bonded ball; a wire pushing step of pushing the wire obliquely downward toward the second bonding point at a plurality of positions by repeating a sequential movement for a plurality of times, the sequential movement including moving of the capillary substantially vertically upward and then obliquely downward toward the second bonding point by a distance shorter than a rising distance that the capillary has moved upward; and a second bonding step of moving the capillary upward and then toward the second bonding point, and bonding the wire onto the second bonding point by pressure-bonding.

Semiconductor device

A terminal of a compact wire loop with a great strength of bonding is formed by a method including: a first folding step in which a tip end of a capillary is raised by a height of Hfrom a pointwhere the center of the capillary is positioned during second bonding on a leadto a point 'p', and then moved horizontally by a first distance of Ltoward a pad, and lowered to a point 'r'; a second folding step in which the tip end of the capillary is raised from the point &#x201c;r&#x201d; to a height of Hand then moved horizontally toward the leadby a second distance of L; and a third bonding step in which the center of the capillary is aligned with and then lowered to a pointon the leadadjacent to the point

Method of manufacturing semiconductor device and wire bonding apparatus

Provided is a wire bonding apparatus including: a wire cutting unit configured to cut a wire by bonding the wire using a capillary and then moving the capillary and a first clamper upward while the first clamper remains closed; and a wire extending unit configured to extend a tail wire from a tip end of the capillary by moving the capillary upward and then moving the capillary and the first clamper upward in a state in which the first clamper is opened and a second clamper is closed. The wire bonding apparatus having such a structure effectively prevents the wire from falling out and bending.

Wire bonding apparatus and wire bonding method

A wire bonding method with the process of performing a first bonding to a pad of a die that is a first bond point, and the process of performing a second bonding to an interconnect wiring (or a lead) that is a second bond point, thus connecting the pad and the interconnect wiring with a wire. A bump is first formed on a pad, and, in a wire cutting step performed during the step of forming the bump, the wire protruding from the tip end of a capillary is bent in the lateral direction to form a bent part, and then the bent part is bonded to the bump, thus completing the first bonding process; after which the wire is bonded to the interconnect wiring, thus completing the second bonding process.

Wire bonding method

A wire bonding apparatus including a bonding control section provided with an electrical non-bonding detector, an optical non-bonding detector, and an optical shape detector, which are for detecting non-bonding between a first bonding point and a bonding wire; and when non-bonding is detected by the electrical non-bonding detector and non-bonding is also detected by the optical non-bonding detector, then the tip end of the bonding wire is reformed by, based on the shape of the tip end of the bonding wire detected by the optical shape detector, a ball formation device into a ball of a prescribed shape, and rebonding is performed at the first bonding point.

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Musashimurayama, Japan

Shinsuke Tei