Murata Manufacturing Co., Ltd.

Shinsuke Tani

Toshiyuki Nakaiso

Yutaka Takeshima

Hayato Katsu

Keisuke Nishida

Takayuki Okada

Mitsutoshi Kawamoto

Yutaka Ishiura

Jun Takagi

Yuji Irie

Ryo Asai

Takahito Tomoda

Yui Nakamura

Takaaki Miyasako

A stretchable wiring board that includes: a stretchable substrate; a first wiring line on the stretchable substrate; an insulating layer overlapping a first part of the first wiring line in a plan view of the stretchable wiring board; and a second wiring line overlapping the first part of the first wiring line in the plan view with the insulating layer interposed therebetween. The insulating layer has at least one first notch, and in the plan view, the at least one first notch does not overlap the first wiring line and overlaps the second wiring line.

Stretchable wiring board

A stretchable mounting board that includes a stretchable substrate having a main surface, a stretchable wiring disposed on the main surface of the stretchable substrate, a mounting electrode section electrically connected to the stretchable wiring, solder electrically connected to the mounting electrode section and including bismuth and tin, and an electronic component electrically connected to the mounting electrode section with the solder interposed therebetween. The mounting electrode section has a first electrode layer on a side thereof facing the stretchable wiring and which includes bismuth and tin, and a second electrode layer on a side thereof facing the solder and which includes bismuth and tin. A concentration of the bismuth in the first electrode layer is lower than a concentration of the bismuth in the second electrode layer.

Stretchable mounting board

A piezoelectric device that includes a sintered body in which a first conductor portion and a second conductor portion are disposed on both principal surfaces of a piezoelectric ceramic base body. The first conductor portion includes conductive films having a predetermined pattern. An insulating film is formed on the principal surface of the piezoelectric ceramic base body on which the conductive films are disposed such that portions of the conductive films are exposed therethrough. The insulating film has a malleability equal to or greater than that of the conductive films.

Piezoelectric device and method for manufacturing piezoelectric device

A stretchable mounting board that includes a mounting electrode section electrically connected to stretchable wiring, and solder electrically connected to the mounting electrode section. The mounting electrode section has a first electrode layer on a side thereof facing the stretchable wiring and which includes bismuth and tin, and a second electrode layer on a side thereof facing the solder and which includes bismuth and tin. A concentration of the bismuth in the first electrode layer is lower than a concentration of the bismuth in the second electrode layer, and the concentration of the bismuth in the second electrode layer is constant along a thickness direction thereof.

A dielectric thin film element having a high humidity resistance is provided. A dielectric thin film element includes a capacitance section having a dielectric layer and a pair of electrode layers formed on the respective upper and lower surfaces of the dielectric layer. Furthermore, a protection layer is provided on the capacitance section, a pair of interconnect layers are drawn out to an upper surface of the protection layer, and external electrodes are formed to be electrically connected to the interconnect layers. Further, first surface metal layers cover a portion of the interconnect layers that extends along the inner surface of the openings and second surface metal layers are formed at end of the first surface metal layers.

Dielectric thin film element, antifuse element, and method of producing dielectric thin film element

An anti-fuse element that includes a capacitance unit having an insulation layer and at least a pair of electrode layers formed on upper and lower surfaces of the insulation layer. The capacitance unit has a protection function against electrostatic discharge. Because the capacitance unit has a protection function against electrostatic discharge, an anti-fuse element can be provided which is less likely to cause insulation breakdown due to electrostatic discharge at the time of, for example, mounting a component.

Anti-fuse element

An anti-fuse element that includes an insulation layer; a pair of electrode layers on the upper and lower surfaces of the insulation layer; and an extraction electrode formed so as to make contact with a section of the electrode layers that form electrostatic capacitance with the insulation layer. The anti-fuse element is configured to create a structural change section including short circuit sections that are short-circuited such that the pair of electrode layers are fused mutually to engulf the insulation layer, and a dissipation section with the electrode layers and insulation layer dissipated by engulfing the insulation layer, when a voltage not less than the breakdown voltage of the insulation layer is applied. Furthermore, the extraction electrode has at least two or more sections in contact with the electrode layer.

Anti-fuse element without defective opens

An anti-fuse element that includes an insulation layer; a pair of electrode layers formed on upper and lower surfaces of the insulation layer; and an extraction electrode contacting a section of the electrode layers forming electrostatic capacitance with the insulation layer. The anti-fuse element is configured to create a structural change section that includes a short circuit section short-circuited such that the pair of electrode layers are fused mutually to engulf the insulation layer, and a dissipation section with the electrode layers and insulation layer dissipated by the engulfing of the insulation layer, when a voltage not less than the breakdown voltage of the insulation layer is applied. The maximum diameter of a section of the extraction electrode in contact with the electrode layer is larger than the maximum diameter of the structural change section.

A semiconductor ceramic has a mixing molar ratio m between the Sr site and the Ti site satisfying the relationship 1.000&#x2266;m&#x3c;1.020, a donor element in an amount of 0.8 to 2.0 moles relative to 100 moles of the Ti element dissolved in the Sr site to form a solid solution, the donor element having a higher valency than the Sr element, a transition metal element, such as Mn, incorporated in an amount of 0.3 to 1.0 mole relative to 100 moles of the Ti element so as to be segregated in grain boundaries, and an average grain size of crystal grains is 1.0 &#x3bc;m or less. A component body in which semiconductor ceramic layers are stacked and internal electrodesare embedded provides a SrTiO-based grain boundary insulation type semiconductor ceramic having a high apparent relative dielectric constant of 5,000 or more even if the average grain size of crystal grains is decreased to 1 &#x3bc;m or less, and a semiconductor ceramic capacitor in which it is possible to achieve both a reduction in layer thickness and improvement in dielectric characteristics by using the SrTiO-based grain boundary insulation type semiconductor ceramic.

Semiconductor ceramic and multilayered-type semiconductor ceramic capacitor

A monolithic semiconductor ceramic capacitor includes semiconductor ceramic layers made of a semiconductor ceramic having a Sr site and a Ti site. The semiconductor ceramic satisfies the inequality 1.000&#x3c;m&#x2266;1.020, wherein m represents the molar ratio of the Sr site to the Ti site. The semiconductor ceramic contains crystal grains and has grain boundary layers. The crystal grains contain a donor element such as La or Sm in the form of a solid solution. The grain boundary layers contain an acceptor element such as Mn, Co, Ni or Cr. The amount of the acceptor element therein is equal to or less than 0.5 mol (preferably 0.3 to 0.5 mol) per 100 mol of Ti. The crystal grains have an average size of 1.0 &#x3bc;m or less (preferably 0.5 to 0.8 &#x3bc;m). Therefore, the monolithic semiconductor ceramic capacitor has good electrical properties, good resistivity, good dielectric strength, and high reliability and is suitable for thin or compact apparatuses.

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Nagaokakyo, Japan

Shinsuke Tani