Kabushiki Kaisha Toshiba

Nuflare Technology, Inc.

Shinsuke Nishimura

Munehiro Ogasawara

Hirofumi Morita

Takanao Touya

A multi charged particle beam irradiation apparatus includes a shaping aperture array substrate, where plural openings are formed as an aperture array, to shape multi-beams by making a region including entire plural openings irradiated by a charged particle beam, and making portions of a charged particle beam individually pass through a corresponding one of the plural openings; and a plurality of stages of lenses, arranged such that a reduction ratio of multi-beams by at least one lens of a stage before the last stage lens is larger than that of the multi-beams by the last stage lens, to correct distortion of a formed image obtained by forming an image of the aperture array by the multi-beams, and to form the image of the aperture array by the multi-beams at a height position between the last stage lens and a last-but-one stage lens, and at the surface of a target object.

Multi charged particle beam irradiation apparatus, multi charged particle beam irradiation method, and multi charged particle beam adjustment method

According to one embodiment, an electron beam irradiation apparatus comprises an objective lens configured to irradiate a specimen surface with an electron beam, an electron detector which is provided between the objective lens and the specimen surface and which is configured to detect reflected electrons or secondary electrons emitted from the specimen surface, and an antireflection mechanism which is provided between the electron detector and the specimen surface. The antireflection mechanism has a plurality of holes following spiral trajectories of reflected electrons or secondary electrons emitted from the specimen surface and is configured to prevent the reflected electrons or secondary electrons from being re-reflected toward the specimen surface and to direct a part of the reflected electrons or secondary electrons to the electron detector.

Electron beam irradiation apparatus and electron beam drawing apparatus

A method for measuring a demagnification of a charged particle beam exposure apparatus includes measuring a first stage position of a mask stage in accordance with a mask stage coordinate system, irradiating a first charged particle beam to a first irradiation position on a specimen through the opening portion of the mask, measuring the first irradiation position in accordance with a specimen stage coordinate system, moving the mask stage to a second stage position, measuring the second stage position of the mask stage, irradiating a second charged particle beam to a second irradiation position on the specimen through the opening portion of the mask measuring the second irradiation position in accordance with the specimen stage coordinate system, and calculating a demagnification of the charged particle beam exposure apparatus from the first and second stage positions and the first and second irradiation positions.

Demagnification measurement method for charged particle beam exposure apparatus, stage phase measurement method for charged particle beam exposure apparatus, control method for charged particle beam exposure apparatus, and charged particle beam exposure apparatus

A charged particle beam lithography apparatus includes a charged particle beam generation source; a charged particle beam forming portion through which the charged particle beam is transmitted; a first deflector arranged between the charged particle beam forming portion and the charged particle beam generation source; a second deflector arranged between the first deflector and the charged particle beam forming portion; an imaging unit obtaining image data of the aperture; and a control portion calculating amounts of excitation of the first and second deflector based on the image data. The charged particle beam is deflected by the first deflector to intersect the optical axis. The deflected charged particle beam is deflected by the second deflector to advance on the optical axis. The control portion controls the first and second deflectors based on the calculated amounts of excitation.

Growing community of inventors

Yokohama, Japan

Shinsuke Nishimura