Toshiba Memory Corporation

Kioxia Corporation

Shinsuke Muraki

Hiroaki Yamada

Katsuhiro Sato

Yuji Hashimoto

Yuya Akeboshi

Satoshi Nakaoka

Hiroaki Ashidate

According to one embodiment, a semiconductor manufacturing device includes a chemical solution preparation tank configured to prepare a solution; a chamber configured to discharge the chemical solution prepared at the chemical solution preparation tank to a substrate; a pressure sensor configured to measure a pressure inside the chemical solution preparation tank; and a variable opening valve arranged between the chemical solution preparation tank and an exhaust pipe.

Semiconductor manufacturing device

A semiconductor manufacturing apparatus according to the present embodiment includes a tank, a heater, a bubble supplier, a sensor and a controller. The tank stores a chemical solution for processing a substrate. The heater heats the chemical solution. The bubble supplier supplies bubbles to the chemical solution in the tank. The sensor detects at least one of a concentration of the chemical solution, a water concentration of the chemical solution, specific gravity of the chemical solution and a vapor concentration of a gas discharged from the tank. The controller controls the supply of bubbles by the bubble supplier based on a detection result of the sensor.

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.

Substrate treatment apparatus

In one embodiment, a semiconductor manufacturing apparatus includes a liquid supplier configured to supply liquid to a film on a substrate and cause a substance to dissolve from the film in the liquid. The apparatus further includes a first channel configured to recover the liquid supplied to the film and feed the liquid again to the liquid supplier, and a second channel configured to drain the liquid supplied to the film. The apparatus further includes a first switching module configured to switch a discharge destination of the liquid supplied to the film between the first and second channels, and a second switching module configured to switch between supplementing and not supplementing the first channel with new liquid. The apparatus further includes a controller configured to control the first and second switching modules to adjust concentration of the substance in the liquid to be supplied to the film.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

Substrate processing device and method of manufacturing semiconductor device

In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50&#xb0; C. and 90&#xb0; C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

Growing community of inventors

Kuwana, Japan

Shinsuke Muraki