Panasonic Corporation

Osaka University

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Holdings Corporation

Shinsuke Komatsu

Yoshio Okayama

Yusuke Mori

Masashi Yoshimura

Masayuki Imanishi

Yoichiro Ueda

Masahiro Tada

Noriyuki Suzuki

Masaki Nobuoka

Akihisa Nakahashi

Mamoru Imade

Michirou Yoshino

Kousuke Murakami

An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

Method for producing group III nitride crystal and seed substrate

A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

An RAMOsubstrate that includes an RAMOmonocrystalline substrate formed of a single crystal represented by general formula RAMO, wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd. The RAMOmonocrystalline substrate has a principal surface with a plurality of grooves. The principal surface has an off-angle &#x3b8; with respect to a cleaving surface of the single crystal. The RAMOmonocrystalline substrate satisfies tan &#x3b8;&#x2264;Wy/Wx, where Wx is the width at the top surface of a raised portion between the grooves, and Wy is the height of the raised portion.

RAMO4 monocrystalline substrate

A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.

Crystal growth apparatus and crystal production method

Provided is a method of manufacturing an organic EL device, wherein a device which has a cathode, an anode facing the cathode, and an organic layer is disposed between the cathode and the anode is provided, a pulsed laser is transmitted through the cathode and is irradiated to the organic layer, and a conductive part having an electrical resistance value lower than that of the organic layer is formed in the organic layer.

Method of manufacturing organic EL device and organic EL device

There are provided an organic electro-luminescence device with filters and a method for repairing the same which are capable of reducing variations in conditions for leak-light transmission during leak-light detection and conditions for transmission of laser light used for repairing, depending on respective types of filters. An organic electro-luminescence device with a filter includes a first electrode in a side for extraction of light to outside; a second electrode placed oppositely to the first electrode; an electro-luminescence layer placed between the first electrode and the second electrode; a filter provided on a surface of the first electrode, the surface of the first electrode being opposite to another surface of the first electrode facing to the electro-luminescence layer, wherein the filter is adapted to transmit, therethrough, light in a certain-wavelength range out of the range of 400 nm to 700 nm; and a certain-wavelength absorption film placed between the filter and the electro-luminescence layer, wherein the certain-wavelength absorption film has a transmittance for light in the certain-wavelength range out of the range of 400 nm to 700 nm lower than its transmittance for light with wavelengths of 400 nm to 700 nm, wherein the certain-wavelength absorption film is adapted to absorb light in the certain-wavelength range.

Organic EL device with filter and method of repairing same

The waveform signals of ultrasonic waves reflected by a plurality of interfaces in a measurement object are received, the waveform signal of a reflected wave on a reference interface inside the measurement object is detected based on the amplitudes of the received waveform signals, and evaluation is made on the bonded condition of an interface to be measured based on the waveform signal of the reflected wave on the reference interface.

Ultrasonic measuring method, electronic component manufacturing method, and semiconductor package

In a comparison between master data created from a waveform signal of an observed object of an acceptable article and a waveform signal obtained from a non-measured observed object, time phase difference generated in the observed object is corrected, and difference with the master data is detected. As a first stage, quality determination is performed on the non-measured observed object with a long interval master data using the created master data, and the time phase difference is corrected. Then, as a second stage, quality determination is performed with the short interval master data divided on a time axis and the similarly divided waveform signal of the observed object. The time phase difference generated between the observed objects (acceptable article and defective article) is thereby corrected, and quality determination of high accuracy can be performed from the comparison with the waveform signal of the acceptable article.

Ultrasonic wave measuring method and apparatus

The induced magnetic field detecting apparatus of the present invention is configured so as to irradiate laser light onto an inspection target from the same side as the side on which a pickup coil for magnetic field detection is disposed and be able to perform irradiation of the laser light and detection of a magnetic field induced by the irradiation of the laser light on the same side relative to the inspection target. Furthermore, the induction magnetic field detection apparatus of the present invention adopts a configuration in which laser light is irradiated onto the inspection target through the inside of the loop-shaped pickup coil set up inside the container. This configuration exerts an effect of being able to detect a feeble magnetic field with higher accuracy.

Growing community of inventors

Osaka, Japan

Shinsuke Komatsu