Ube Industries, Inc.

Shinsuke Jida

Masataka Fujinaga

Takuma Sakai

Takayuki Ueda

Takeshi Yamao

Kazuki Iwashita

Michio Honda

Mao Sumino

Takafumi Kawano

Masataka Yamanaga

Takayuki Fujii

Yuki Nagao

A silicon nitride powder having a specific surface area of 4.0 to 9.0 m/g, a &#x3b2; phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks, peak tops of the peaks are present respectively at 0.4 to 0.7 &#x3bc;m and 1.5 to 3.0 &#x3bc;m, a ratio of frequencies of the peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 &#x3bc;m)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 &#x3bc;m)) is 0.5 to 1.5, and a ratio D50/D(&#x3bc;m/&#x3bc;m) of a median diameter D50 (&#x3bc;m) determined by the measurement of particle size distribution to a specific surface area-equivalent diameter D(&#x3bc;m) calculated from the specific surface area is 3.5 or more.

Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder

An oxynitride phosphor powder has a fluorescence peak wavelength of 587 to 630 nm and a high external quantum efficiency. A method of producing the oxynitride phosphor powder containing Li at 50 to 10,000 ppm includes mixing silicon nitride powder, a substance serving as an aluminum source, a substance serving as a calcium source and a substance serving as an europium source; firing the mixture at 1500 to 2000&#xb0; C. in an inert gas atmosphere or a reducing gas atmosphere to obtain a fired oxynitride phosphor composed mainly of Ca-containing &#x3b1;-SiAlON, as an intermediate; and heat treating the fired oxynitride phosphor at a temperature of 1450&#xb0; C. to less than the firing temperature, in an inert gas atmosphere or in a reducing gas atmosphere in the presence of Li.

Oxynitride phosphor powder and method for producing same

An (oxy)nitride phosphor powder has a fluorescence peak wavelength of 610 to 625 nm and also has higher external quantum efficiency than the conventional one. The (oxy)nitride phosphor powder includes an &#x3b1;-type SiAlON and aluminum nitride, represented by the compositional formula: CaEuSiAlONwherein x1, x2, y, z fulfill the following formulae: 1.60&#x2266;x1+x2&#x2266;2.90, 0.18&#x2266;x2/x1&#x2266;0.70, 4.0&#x2266;y&#x2266;6.5, 0.0&#x2266;z&#x2266;1.0. The powder can additionally contain Li in an amount of 50 to 10000 ppm. The content of the aluminum nitride may be more than 0 mass % to less than 33 mass %.

(Oxy)nitride phosphor powder and method of producing same

An oxynitride phosphor powder is an &#x3b1;-SiAlON phosphor having a dominant wavelength of 565-577 nm and fluorescence intensity and external quantum efficiency that are high enough for practical use. The oxynitride phosphor powder comprises an &#x3b1;-SiAlON represented by the compositional formula: CaEuYbSiAlON(wherein 0.0&#x3c;x1&#x2266;2.0, 0.0000&#x3c;x2&#x2266;0.0100, 0.0000&#x3c;x3&#x2266;0.0100, 0.4&#x2266;x2/x3&#x2266;1.4, 1.0&#x2266;y&#x2266;4.0, 0.5&#x2266;z&#x2266;2.0).

Oxynitride phosphor powder

An oxynitride phosphor powder contains &#x3b1;-SiAlON and aluminum nitride, obtained by mixing a silicon source, an aluminum source, a calcium source, and a europium source to produce a composition represented by a compositional formula: CaEuSiAlON(wherein x1, x2, y and z are 0&#x3c;x1&#x2266;3.40, 0.05&#x2266;x2&#x2266;0.20, 4.0&#x2266;y&#x2266;7.0, and 0&#x2266;z&#x2266;1), and firing the mixture.

Oxynitride phosphor powder, silicon nitride powder for production of oxynitride phosphor powder, and production method of oxynitride phosphor powder

A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: CaEuSiAlON(in the Formula, x1, x2, y, and z are values such that 0&#x3c;x1&#x2266;3.40, 0.05&#x2266;x2&#x2266;0.20, 3.5&#x2266;y&#x2266;7.0, 0&#x2266;z&#x2266;1).

Wavelength conversion member and light-emitting device employing same

An oxynitride phosphor power has a fluorescence peak wavelength of 580 to 605 nm, the oxynitride phosphor having a higher external quantum efficiency than ever before. The oxynitride phosphor powder is an oxynitride phosphor powder containing &#x3b1;-SiAlON and aluminum nitride, represented by composition formula:CaEuSiAlONwherein x1, x2, y and z are 0&#x3c;x1&#x2266;2.50, 0.01&#x2266;x2&#x2266;0.20, 0&#x3c;y&#x2266;2.3 and 1.5&#x2266;z&#x2266;3.5, or x1, x2, y and z are 0&#x3c;x1&#x2266;2.70, 0.05&#x2266;x2&#x2266;0.20, 2.3&#x2266;y&#x2266;5.5 and 1&#x2266;z&#x2266;2.5.

A polycrystalline silicon ingot casting mold, and method for producing same. Mold release material being obtained by blending a silicon nitride powder (A) having an average particle diameter along the short axis of 0.6 to 13 &#x3bc;m with a silicon nitride powder (B) having an average particle diameter along the short axis of 0.1 to 0.3 &#x3bc;m at a weight ratio of 5:5 to 9:1; coating the mold surface with the slurry; and a heating the mold at 800 to 1200&#xb0; C. in an atmosphere containing oxygen.

Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same

Provided are a crystalline silicon nitride powder for a siliconitride phosphors, which is used as a starting material for producing a siliconitride phosphor containing a silicon element and a nitrogen element but no oxygen element as a constitutent element, an oxygen content of the silicon nitride phosphor being 0.2-0.8 wt %; a CaAlSiNphosphor, an SrSiNphosphor, an (Sr, Ca)AlSiNphosphor and an LaSiNphosphor, each using the silicon nitride powder; and a method for producing the phosphors.

[object Object]

Provided is a silicon nitride powder for siliconitride phosphor having high luminance, a SrAlSiONphosphor and a &#x3b2;-Sialon phosphor using the powder, which can be used for vacuum fluorescent displays (VFDs), field emission displays (FEDs), plasma display panels (PDPs), cathode ray tubes (CRTs), light emitting diodes (LEDs), or the like, and processes for producing these phosphors. The silicon nitride powder for the siliconitride phosphors is a crystalline silicon nitride powder for use as a raw material for producing siliconitride phosphors including a silicon element, a nitrogen element, and an oxygen element, and has an average particle diameter of 1.0 to 12 &#x3bc;m and an oxygen content of 0.2 to 0.9% by weight.

Provided are a polycrystalline silicon ingot casting mold and a method for producing a polycrystalline silicon ingot casting mold, with which high-quality silicon ingots can be obtained at high yields by minimizing sticking with the surfaces of the silicon ingot casting mold, and losses and damages that occur when solidified silicon ingot is released from the mold. The method for producing a polycrystalline silicon ingot casting mold having a release layer, including: forming a slurry by mixing a silicon nitride powder with water, coating the surface of the mold with the slurry, and heating the mold at 400 to 800&#xb0; C. in an atmosphere containing oxygen, after coating the slurry.

A method for producing an &#x3b1;-sialon-based oxynitride phosphor includes a mixed powder blended such that the product is represented by the formula: MSiAlON:Ln(wherein M is at least one metal selected from Li, Ca, Mg, Y and a lanthanide metal excluding La and Ce, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb and Yb), the mixed powder containing an amorphous silicon nitride powder having an loose bulk density of 0.16 to 0.22 g/cm, and is fired at 1,400 to 2,000&#xb0; C. in a nitrogen-containing inert gas atmosphere.

Production method of sialon-based oxynitride phosphor, and sialon-based oxynitride phosphor

Mold for casting a polycrystalline silicon ingot, and a silicon nitride powder for a mold release material thereof, a slurry containing a silicon nitride power for a mold release layer thereof, and a mold release material for casting thereof. The present invention relates to a silicon nitride powder for a mold release material of a mold for casting a polycrystalline silicon ingot characterized in that the percentage of primary particles of granular crystals monodispersed in powders is not less than 95% in terms of the area ratio calculated by analysis of an SEM image.

Mold for casting polycrystalline silicon ingot, and silicon nitride powder for mold release material thereof, slurry containing silicon nitride powder for mold release layer thereof and mold release material for casting thereof

Growing community of inventors

Ube, Japan

Shinsuke Jida